FM28V202 Search Results

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically

Contextual Info: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically

Contextual Info: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM28V202

Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

TSOP-II 44 layout

Abstract: FM28V102
Contextual Info: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM Organized as 64Kx16 Configurable as 128Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM • Organized as 64Kx16  Configurable as 128Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM24CL64b

Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine