100VDD Search Results

HEF4541B

Abstract: HEF4541BP 10Vd-D HEF4541BT hef4541 400VDD
Contextual Info: HEF4541B Programmable timer Rev. 4 — 25 June 2012 Product data sheet 1. General description The HEF4541B is a programmable timer which consists of a 16-stage binary counter, an integrated oscillator to be used with external timing components, an automatic power-on

Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: SAFETY DRGANIZATIDNS RELIABILITY SPEEIFIEATIENS THIS FILTER HAS BEEN FORMALLY RFLDGNIZED, CERTIFIED DR AFFRDVED BY THE LISTED AGENCY, THEREFORE, ALL TE S T / R E Q U I R E M E N T S SPECIFIED IN THE DATEST REVISION DP THE F G C CGWING AGENCY STANDARDS HAVD BEEN MET

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Contextual Info: HEF4541B-Q100 Programmable timer Rev. 1 — 21 October 2013 Product data sheet 1. General description The HEF4541B-Q100 is a programmable timer. It consists of a 16-stage binary counter, an integrated oscillator to be used with external timing components, an automatic

CEM-1 20Z

Contextual Info: SAFETY EREANIZATIENS RELIABILITY SPEEIFIEATIENS THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIRIED OR APPROVED DY THD DISTDD AGENCY THEREFDRE, ADD TDST/RDDDIRDMENTS SPECIFIED IN THE DATEST REVISION OF THE F D D D O H N O AGENCY STANDARDS HAVD BGDN MET STDPAGG TGMPGRATDRG -40°0 TO +85°C

Contextual Info: SAFETY EREANIZATIENS RELIABILITY SPEEIFIEATIENS THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIRIED OR APPROVED EY THD DISTDD AGENCY THEREFDRE, ALL TEST/REDUIREMENTS SPECIFIED IN THE LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS HAVE BEEN MET STDPAGG TGMPGRATORG -40°D TO +85°C

Contextual Info: HEF4541B-Q100 Programmable timer Rev. 2 — 31 December 2013 Product data sheet 1. General description The HEF4541B-Q100 is a programmable timer. It consists of a 16-stage binary counter, an integrated oscillator to be used with external timing components, an automatic

Contextual Info: SAFETY EREANIZATIGNS RELIABILITY SPEEIFIEATIGNS THIS FIDTDR HAS DDDN FDRMADDY RFDDDNIZDD, DDRTIFIED DR APPROVDD BY THE LISTED AGENCY, THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION DF THE FDLLDWING AGENLY STANDARDS HAVE BEEN MET STORAGE TEMPFRATORF: -40°0 TD +B5°D

Contextual Info: SAFETY DRGANIZATIONS RELIABILITY SPELIF ILATIDNS : THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIRIED OR APPROVED DY THD DISTDD AGENCY THEREFDRE, ADD TDST/RDDDIRDMDNTS SPECIFIED IN THE DATEST REVISIDN DF THE GDCCDWING AGENCY STANDARDS HAVD BEEN MET STDPAGG TGMPGRATDRC -40°C TO +85°C

Contextual Info: SAFETY EREANIZATIENS RELIABILITY SPEEIFIEATIENS THIS FILTER HAS BEEN FDRMADDY R E C O G N I Z E D , CERTIFIED DR APPROVED BY THE LISTED AGENCY, THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE DATEST REVISION DF THE FDDDDWIND ADDNDY STANDARDS HAVE BEEN MET

CMPA801B025

Abstract: X-band Internally Matched Power GaN HEMTs
Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: SAFETY ORGANIZATIONS THIS F ILTER HAS BEEN F OR MALLY RECOGNIZED, DY THD D I S T D D A D DNCY THDRDFDRD, O D 1283 C S A 22,2, VDD APPRDVDD VDD 565-3 ADD TEST/REQDIRRMDNTS SPDDIFIDD DORRDNT DVDRDDAD TDST INDDCTANCE: DAPADITANDD 15 AMP, 1 2 0 / 2 5 0 VAD, 10 AMP/40° D, 2 5 0 V A D

CMPA801B025

Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher