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1B025F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Contextual Info: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +1x-band internally matched power gan hemts	PDF
Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +2x-band mmic 3.5 dc jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +3cree rf package 440208 cree rf cmpa801b025f	PDF