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CMPA80 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CMPA801B025F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ 440208	Original	PDF	2.08MB
CMPA801B025F-AMP		Wolfspeed	CMPA801B025F DEV BOARD WITH HEMT	Original	PDF	2.26MB
CMPA801B025F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ MODULE	Original	PDF	2.08MB
CMPA801B030F		Wolfspeed	GAN MMIC 30W 28V 8.0-11.0GHZ	Original	PDF	6.66MB

CMPA80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f	PDF
Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa801b025d cmp801b025d	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa801b025d cmp801b025d	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +1x-band internally matched power gan hemts	PDF
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f	PDF
CMPA801B025D Abstract: CMPA801B025 Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa801b025d cmp801b025d cmpa801b025	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +2x-band mmic 3.5 dc jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	cmpa801b025f cmpa80 1b025f cmpa801b025 +3cree rf package 440208 cree rf cmpa801b025f	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	cmpa801b025d cmp801b025d	PDF