100V 60A N CHANNEL MOSFET Search Results

70N10

Contextual Info: STD60N10 STP70N10 N-channel 100V - 0.016Ω - 60A TO-220 / DPAK Low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)Max ID STD60N10 100V <0.0195Ω 60A STP70N10 100V <0.0195Ω 65A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)

Mosfet

Abstract: SSF1020D
Contextual Info: SSF1020D 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 16mΩ(typ.) ID 60A DPAK Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF1020
Contextual Info: SSF1020 100V N-Channel MOSFET FEATURES ID =60A  Advanced trench process technology  Ultra low Rdson, typical 16mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product BV=100V RDS ON =16mΩ（Typ.）

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR  DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

2sk2365

Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Contextual Info: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A

Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

la 4290

Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

Contextual Info: AP95T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance RoHS Compliant & Halogen-Free ID G 100V 6.4m 60A S Description Advanced Power MOSFETs from APEC provide the

STW60NE10

Contextual Info: STW60NE10 N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW60NE10 • ■ ■ ■ VDSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

STW60NE10

Abstract: stw60ne
Contextual Info: STW60NE10 N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW60NE10 • ■ ■ ■ VDSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: AP95T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 6.4mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the

60NE10

Abstract: stw60ne10
Contextual Info: STW60NE10  N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW 60NE10 • ■ ■ ■ V DSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

IXTP60N10T

Abstract: IXTA60N10T IXTP60N10 60N10T 60n10
Contextual Info: IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient

Contextual Info: TrenchMVTM Power MOSFET IXTA60N10T IXTP60N10T VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient

STP60NE10

Abstract: STP60NE10FP
Contextual Info: STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE10 STP60NE10FP 100 V 100 V < 0.022 Ω < 0.022 Ω 60 A 30 A • ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY

Contextual Info: APM1103NG N-Channel Enhancement Mode MOSFET Features • Pin Description 100V/60A, • • D G RDS ON =8.5mΩ (typ.) @ VGS=10V S Reliable and Rugged Lead Free and Green Devices Available Top View of TO-263-3 (RoHS Compliant) D Applications • G Power Management in Inverter Systems

STP60NE10

Abstract: STP60NE10FP airbag control
Contextual Info: STP60NE10 STP60NE10FP  N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE10 STP60NE10FP 100 V 100 V < 0.022 Ω < 0.022 Ω 60 A 30 A • ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY

IXTQ60N10T

Abstract: 60N10T 60n10
Contextual Info: Advance Technical Information IXTQ60N10T TrenchTM Power MOSFET VDSS ID25 RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Advance Technical Information TrenchTM Power MOSFET VDSS ID25 IXTQ60N10T RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

SML01N07

Abstract: SML01N07T 100V 60A Diode
Contextual Info: SEME SML01N07 LAB 4TH GENERATION MOSFET MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790)

Mosfet

Abstract: SSF1122
Contextual Info: SSF1122 110V N-Channel MOSFET FEATURES ID =60A  Advanced trench process technology  Ultra low RDS ON  High avalanche energy, 100% test  Fully characterized avalanche voltage and current BV=110V RDS(ON)=20mΩ（Typ） DESCRIPTION The SSF1122 is a new generation of middle voltage and high

Contextual Info: CPEC RX60N10 RX60N10 Silicon N Channel Power MOSFET Description The RX60N10 is n-channel enhancement mode Trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . It is also intended for any applications