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    IXYS Corporation IXTQ60N10T

    MOSFET N-CH 100V 60A TO3P
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    DigiKey IXTQ60N10T Tube 300
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    Mouser Electronics IXTQ60N10T
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    TTI IXTQ60N10T Tube 300
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    Littelfuse Inc IXTQ60N10T

    Discmsft Nchtrenchgate-Gen1 To-3P (3)/ Tube |Littelfuse IXTQ60N10T
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    Newark IXTQ60N10T Bulk 300
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    IXTQ60N10T Datasheets Context Search

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    IXTQ60N10T

    Abstract: 60N10T 60n10
    Contextual Info: Advance Technical Information IXTQ60N10T TrenchTM Power MOSFET VDSS ID25 RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTQ60N10T 60N10T 7-08-A IXTQ60N10T 60n10 PDF

    Contextual Info: Advance Technical Information TrenchTM Power MOSFET VDSS ID25 IXTQ60N10T RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTQ60N10T 60N10T 7-08-A PDF