100UC Search Results

mil-std-883 2015

Abstract: mil-std-883* 2015 LV500 BOX BUILD FABRICATION PROCESS INCOMING RAW MATERIAL INSPECTION method for Total organic carbon analyzer INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report
Contextual Info: Littelfuse Quality and Reliability 11 Transient Voltage Suppression PAGE Littelfuse Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-3

stk 0450

Abstract: stk 3040
Contextual Info: Back to Ultra Fast Rectifiers ^ NES2601 NES2601HR2 NES2602 NES2602HR2 NES2603 NES2603HR2 NES2603-225 % W^NEW ENGLAND SEMICONDUCTOR POWER RECTIFIERS High Efficiency, 30 Ampere Center-Tap • VERY LOW FORW ARD VOLTAGE • VERY FAST SW ITC H IN G SPEED • CONVENIENT PACKAGE

Contextual Info: • T i 75,00500 00003*44 Sfi^ ■ M i CRo V e RTER DC-DC Converters, 200-250 Watt Family W o rld 's M o s t A d v a n c e d U ltra H ig h Evaluation Boards and Triple Output Modules Available D ensity S in g le a n d T riple O u tp u t D C -D C C o n ve rte rs

Contextual Info: RECTIFIER, 1 kV, 3.25A, 150ns January 7, 1998 3SFR0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA Low reverse recovery time Hermetically sealed in Metoxiiite fused metal oxide

relay 12 volts ras 1210

Abstract: GE-MOV 275L40B MOV GE V150 LA10 275l40b Disc ceramic capacitor GE 130L20 hahn transformer VDE 0551 ge 130l10 c106d spice HARRIS V481DB40 G1 capacitor 275L20
Contextual Info: $5.00 Technical Assistance Transient Voltage Suppression Technical Assistance Electronic Technical Support Ask our experienced staff of engineers for assistance with: Electronic services from Littelfuse offer you the most current information possible. • Device Selection

H13B1

Abstract: H17B1 pair of led and photo transistor photo interrupter module h13a1 GE H11D2 H11B255 H11C1 H13A2 H13B2 H15B1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) Tr Tf 1 2 2 VCEISAT) MAX. •* AC INPUT COUPLER 20% 10% I I 100 200 30 30

Contextual Info: Back to FETs N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY S urface M ount Q uad • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW R ds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage

Contextual Info: UP lI January 7, 1998 200V, 4A, 30ns QUICK REFERENCE DATA Very low reverse recovery tim e Low forward voltage drop Glass passivated for herm etic sealing Low switching losses Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS @ 25°C •

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

10C1

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator type B H 2 8 F B 1 WG PACKAGE Fig.1 Plastic Mold BLOCK F ig. 2 TEST CIRCUIT Fig.3 - 9 APPRICATION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 2.8 V ± 1 . 0 %

LM 358 battery charger schematic

Abstract: IC LM356 LM356 Heat Sinks for TO-220 packages TX-3001 TPS 4339 S/BIP/SCB345100/B/30/10/ferrite ei core 33A
Contextual Info: Application Note 15 Practical Switching Regulator Circuits by Brian Huffman O verview A golden power supply that will satisfy every design require­ ment does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be

Contextual Info: LT1201/LT1202 □ m TECHNOLOGY D ual a n d Q u a d 1m A , 12MHz, 50V/jas O p Am ps FCRTURCS DCSCMPTIOn • 1 mA Supply Current per A m plifier The LT1201/LT1202 are dual and quad low power, high ■ 50V/|is Slew Rate ■ 12MHzGain-Bandwidth speed operational amplifiers with excellent DC perfor­

Contextual Info: faOE D • a23SbOS D0Mb353 Sé? B S I E G SIEMENS -T'*t- S 3 PHOTOTRANSISTOR OPTOCOUPLER SIEMENS AKTIENGESELLSCHAF FEATURES • IL2B P a c k a g e D im e n s io n s in In c h e s m m F iv e C T R S e le c t io n s • H ig h C o lle c t o r - E m it t e r V o lt a g e , B V CEO= 5 0 V

Contextual Info: 2 ,0 0 0 V - 5 ,0 0 0 V R e c tifie rs 1N6521U 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 1N 6523U 1N 6525U SURFACE MOUNT HERMETICALLY SEALED ~ ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number] Working Reverse Voltage Average Rectified Current

Contextual Info: 600 V -1,000 V Rectifiers 3.0 A - 5.0A Forward Current 150 ns • 3000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward

TRANSISTOR TCD 100

Abstract: 3n123 teledyne transistor Transistor Bo 17 BU100
Contextual Info: TELEDYNE COMPONENTS EflE D • ûW bOa □GGt.5cì3 1 M LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR G E O M E T R Y 45Q ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G PARAM ETER SYM BO L 3N123 U N IT S Collector to Base Voltage

MODEL550

Abstract: GM4WA25300A 8085 traffic light control EIAJ C-3
Contextual Info: ^ SH ARP -osa S P E C -N o — ISSUE D T ï ï 72 Feb-6-07 COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS(ELECOM GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4WA25300A CU STO M ER S' A PPRO V A L

CI23

Abstract: cd 2313 TCA 700 MI-40 C123F Rato T M 2313 TCA 700 v C123A C123B
Contextual Info: DIGITRON Reference No, ELECTRONIC CORP 3bE D 5fi45b07 □□ODGlb 7 DGE SÀ^V .î,Y.23‘r. 'v rTS)'S-J£ o3 1 11 Vy j is o l# t e d 8A RMS I t a b Up to 600 Volts C123 J MAXIMUM ALLOWABLE RATINGS Rspelltlv» Peak O ff-S taU . Voltage, VORM<3) Type • ' TC “ -40°C to HOO°C

diode 0.2 V 1A

Contextual Info: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers:

Contextual Info: IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology

IKB01N120H2

Abstract: IKP01N120H2 Q67040-S4589 Q67040-S4590 fast recovery diode 1a 1200v SMD 1200V
Contextual Info: IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

Contextual Info: IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology

MPD2133

Abstract: MPD-2131 IPD/MPD2132
Contextual Info: SIEMENS MPD2131 TXVB, IPD2131 herMPD2132 TXVB, IPD2132 HIGH EFF. GREEN MPD2133 TXVB, IPD2133 YELLOW 0.200" 8-Character 5 X 7 Dot Matrix X-Y Stackable, HI-REL Alphanumeric Programmable Display FEATURES • Eight .2" Dot Matrix Characters n a Ceramic Package

D 4242 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF3P03HD Medium Power Surface Mount Products Motorola Preferred Dtvlci T M O S P-Channel Field Effect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs