100UC Search Results

mil-std-883 2015

Abstract: mil-std-883* 2015 LV500 BOX BUILD FABRICATION PROCESS INCOMING RAW MATERIAL INSPECTION method for Total organic carbon analyzer INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report
Contextual Info: Littelfuse Quality and Reliability 11 Transient Voltage Suppression PAGE Littelfuse Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-3

stk 0450

Abstract: stk 3040
Contextual Info: Back to Ultra Fast Rectifiers ^ NES2601 NES2601HR2 NES2602 NES2602HR2 NES2603 NES2603HR2 NES2603-225 % W^NEW ENGLAND SEMICONDUCTOR POWER RECTIFIERS High Efficiency, 30 Ampere Center-Tap • VERY LOW FORW ARD VOLTAGE • VERY FAST SW ITC H IN G SPEED • CONVENIENT PACKAGE

Contextual Info: • T i 75,00500 00003*44 Sfi^ ■ M i CRo V e RTER DC-DC Converters, 200-250 Watt Family W o rld 's M o s t A d v a n c e d U ltra H ig h Evaluation Boards and Triple Output Modules Available D ensity S in g le a n d T riple O u tp u t D C -D C C o n ve rte rs

smps* ZVT

Abstract: smps 10w 5V IKB01N120H2 IKP01N120H2 smps 10w 12V
Contextual Info: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology

Contextual Info: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology

1200V

Abstract: IKP01N120H2
Contextual Info: IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

12085

Abstract: marking Hll
Contextual Info: THICK FILM TEMPERATURE COMPENSATION RESISTOR RGT Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic Heat conducting ceramic substrate SERIES Digital marking High conductivity plate-on Negative temperature coefficient

Contextual Info: IDIOTI ;sc=ü RECTIFIER, 1 kV, 3.25A, 150ns January 7, 1998 3SFR0 TEL805-498-2111 FAX805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA Low reverse recovery tim e Hermetically sealed in Metoxiiite fused metal oxide

Contextual Info: RECTIFIER, 1 kV, 3.25A, 150ns January 7, 1998 3SFR0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA Low reverse recovery time Hermetically sealed in Metoxiiite fused metal oxide

relay 12 volts ras 1210

Abstract: GE-MOV 275L40B MOV GE V150 LA10 275l40b Disc ceramic capacitor GE 130L20 hahn transformer VDE 0551 ge 130l10 c106d spice HARRIS V481DB40 G1 capacitor 275L20
Contextual Info: $5.00 Technical Assistance Transient Voltage Suppression Technical Assistance Electronic Technical Support Ask our experienced staff of engineers for assistance with: Electronic services from Littelfuse offer you the most current information possible. • Device Selection

H13B1

Abstract: H17B1 pair of led and photo transistor photo interrupter module h13a1 GE H11D2 H11B255 H11C1 H13A2 H13B2 H15B1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) Tr Tf 1 2 2 VCEISAT) MAX. •* AC INPUT COUPLER 20% 10% I I 100 200 30 30

Contextual Info: Back to FETs N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY S urface M ount Q uad • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW R ds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage

Contextual Info: UP lI January 7, 1998 200V, 4A, 30ns QUICK REFERENCE DATA Very low reverse recovery tim e Low forward voltage drop Glass passivated for herm etic sealing Low switching losses Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS @ 25°C •

1314.2101

Contextual Info: MENTOR Technische Daten Empfänger Klemm-System Technical Date Receiver Plug-in-System 1314.2101 Artikel-Nr. Silizium-NPN-Fototransistor Empfängertyp Sperrspannung Vn 50 V max. Kollektor-Emitterspannung VCE 50 mA max. Kollektorstrom lc 100 mA Kollektorspitzenstrom tP< 1ms, l0SM

NES2601

Abstract: NES2601HR2 NES2602 NES2603 NES2603-225 NES2603HR2
Contextual Info: NES2601 NES2601HR2 NES2602 NES2602HR2 NES2603 NES2603HR2 NES2603-225 POWER RECTIFIERS High Efficiency, 30 Ampere Center-Tap • VERY LOW FORWARD VOLTAGE • VERY FAST SWITCHING SPEED • CONVENIENT PACKAGE • HIGH SURGE • LOW' THERMAL RESISTANCE • MECHANICALLY RUGGED

Contextual Info: r~\ /rii—, rJl ^ r ^ r L - n - M i U L s lS L r -J January 7, 1998 RECTIFIER, up to 200V, 4A, 30ns 3PFT05 3PFT15 3PFT1 3PFT2 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

10C1

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator type B H 2 8 F B 1 WG PACKAGE Fig.1 Plastic Mold BLOCK F ig. 2 TEST CIRCUIT Fig.3 - 9 APPRICATION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 2.8 V ± 1 . 0 %

LM 358 battery charger schematic

Abstract: IC LM356 LM356 Heat Sinks for TO-220 packages TX-3001 TPS 4339 S/BIP/SCB345100/B/30/10/ferrite ei core 33A
Contextual Info: Application Note 15 Practical Switching Regulator Circuits by Brian Huffman O verview A golden power supply that will satisfy every design require­ ment does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be

Contextual Info: LT1201/LT1202 □ m TECHNOLOGY D ual a n d Q u a d 1m A , 12MHz, 50V/jas O p Am ps FCRTURCS DCSCMPTIOn • 1 mA Supply Current per A m plifier The LT1201/LT1202 are dual and quad low power, high ■ 50V/|is Slew Rate ■ 12MHzGain-Bandwidth speed operational amplifiers with excellent DC perfor­

Contextual Info: faOE D • a23SbOS D0Mb353 Sé? B S I E G SIEMENS -T'*t- S 3 PHOTOTRANSISTOR OPTOCOUPLER SIEMENS AKTIENGESELLSCHAF FEATURES • IL2B P a c k a g e D im e n s io n s in In c h e s m m F iv e C T R S e le c t io n s • H ig h C o lle c t o r - E m it t e r V o lt a g e , B V CEO= 5 0 V

Contextual Info: 2 ,0 0 0 V - 5 ,0 0 0 V R e c tifie rs 1N6521U 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 1N 6523U 1N 6525U SURFACE MOUNT HERMETICALLY SEALED ~ ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number] Working Reverse Voltage Average Rectified Current

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.