100MA 45 V NPN Search Results

BCB47A

Contextual Info: S TïïTTÏÏTl T ransistors SOT-23 Types SST (Super Slim Transistor Function Pre Am p Low Noise Am p Driver Driver hM f,(M H z) C ob (pF) P ackage 800 1 1 0 -2 5 0 100mA/1 V 150 6 Fig. 16 NPN 45 800 160 ~ 400 100mA/1 V 150 6 Fig 16 NPN 45 100 1 1 0 -2 3 0

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

bcy59x

Abstract: BCY59-VIII BCY59IX bcy59v BCY59-X bcy59-vii bcy58-x BCY59VII BCY59
Contextual Info: DATA SHEET BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

Contextual Info: BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon NPN epitaxial planar transistors, mounted in a hermetically sealed metal case, designed

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

2n5786

Abstract: 2N5783
Contextual Info: 2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications.

ZETEX T1049

Abstract: T1049 ZDT1049 DSA003723
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

d44c5

Abstract: d44c9 D44C11
Contextual Info: D44C SERIES w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

LC32A

Abstract: 2N5783 2N5786
Contextual Info: Datasheet AU_ 2N5783 2N5786 m TM C e nItw MMil III PNP NPN COM PLEM ENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors

ZTX384C

Abstract: ztx384 low noise transistor ZTX38
Contextual Info: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Output Capacitance MIN. TYP. MAX. UNIT CONDITIONS. Cobo 2.5 5 pF VCB=10V, f=1MHz Input Capacitance Cibo 11 pF VEB=0.5V, f=1MHz

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

Contextual Info: DIE NO. NPN Medium Power TRANSISTOR DIE No. IMAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 45 V Collector-Base Voltage VcBO 45 V Emitter-Base Voltage Vebo 5 V Parameter D—15 • DESCRIPTION Collector Current Continuous

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

2N2916

Contextual Info: 2N2914 2N2916 2N2918 S EM E LA B MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)

2N2916

Abstract: 2N2918 2N2914 2N2916 Transistor
Contextual Info: 2N2914 2N2916 2N2918 SEME LAB MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)

2N2915

Abstract: 2N2917 2N2913 2n2917 dual transistor
Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

D44C5

Abstract: D44C7 D44C6 d44c8 D44c3 TRANSISTOR D44C11 Data d44c1 D44C4 D44C10 D44C9
Contextual Info: DATA SHEET D44C SERIES NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR D44C Series types are NPN Silicon Power Transistors designed for general-purpose amplifier and switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted

BCY79C

Abstract: BCY79B
Contextual Info: BCY79 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, PNP TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN

2N2913

Abstract: 2N2915
Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

ZTX618

Abstract: ZTX718 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1