ZTX384C
Abstract: ztx384 ZTX38
Contextual Info: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ISSUE 2 - MARCH 94_ FEATURES * 30 Volt VCE0 * High Gain * Low Noise APPLICATIONS * Audio circuits E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ztx384c100mhz200ua15khz+3200naztx384ztx38
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ZTX384C
Abstract: ztx384 low noise transistor ZTX38
Contextual Info: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Output Capacitance MIN. TYP. MAX. UNIT CONDITIONS. Cobo 2.5 5 pF VCB=10V, f=1MHz Input Capacitance Cibo 11 pF VEB=0.5V, f=1MHz
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ztx384c15khz100maztx384+2low noise transistorztx38
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ZTX384
Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Contextual Info: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both
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bpw41dztx384ultrasonic 4046 pllzpd200+6low noise ir photodiode amplifierintroduction of automatic room light controldesign and construction wave fm radio transmitterbpw41 ir databpw41 circuit application4046 self bias amplifier
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ZTX327
Abstract: ZTX321
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10
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mpsa42fxta42ztx341ztx300+7mpsa92fxta92ztx541ztx500ztx327ztx3866ztx321
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low noise transistors
Abstract: MPS2369A
Contextual Info: Section S: Bipolar Transistors _General Purpose and S w itc h in g Transistors E-Line S w itc h in g T r a n s i s t o r s lP;> 300m W Pinout Details: 1-Collector, 2-Base,
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ztx341ztx314mps2369aztx300+4ztx541ztx500ztx510low noise transistors
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ZTX415
Abstract: ZTX341 ZTX384 S2222A ZTX327 ZTX321 ZTX3866 ZTX325
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS P ART V CBO v CEO hFE m ln @ V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.5 0 .3 5 -3 00 -300 -100 -3 00 -3 00 -100 -0 .5 -0 .5 -0.1 -0 .4 -0 .4 -0 .5 -25 -2 5 -0 .2 -0 .3 5 PIN f t LU v CE sat
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fxta42ztx341ztx300fxta92+10ztx500ztx327ztx3866fxt3866ztx325ztx320ztx415ztx384s2222aztx321
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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zvp2106czvp2110azvp2110czvp2120a+11ztx788bzvp2120czvp3306azvp3310azvp4105a2110cztx752 equivalenttransistor 42-10a databc369fxta92bss98
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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BY206 diode
Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
Contextual Info: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex
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fx15891000v1ztx214cztx384c+11zvn2110aztx300by206 diodemosfet triggering circuit for inverter12v energy light circuit diagramthyristor capacitive discharge ignitionxenon tubediac 502transistor tr4ed69diode by206
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircd376bd234vt854vt855+14itt44bzx79-c24bzx83-c24bzx88-c24sx3704brc157brc-116germanium diode aa1431n4148 itttransistor bc147bc107/spice model bf199by238sn76226dntungsram
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