100JUS Search Results

1gw transistor

Abstract: 1j4b41 Toshiba thyristors smd 1gw transistor smd 1zc diode s5688G PFR 215 N equivalent 1J4B41 equivalent
Contextual Info: 2. RATINGS AND USAGE 2.1 Maximum Ratings 2.1.3 Current Ratings. 1 Steady state operation current rating. TcMax (or Ta Max)- If(AV) (or Io) , curves show current which can be supplied at steady state. These curves are set so as to make the junction temperature o f elements

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: PHOTOINTERRUPTERS ACTUATOR TAPE PH 0 TO INTER R U PTER S SG-401 DIMENSIONS U n itim m SG-401 (1, m m i t l H * - K t s ( 8 S f t 7 = f h F 7 > v 7 7 £ -b > if-g B C & o , 77'75: z L i - $ # * 7 = j - FT • 7 7 '? v 5 'J o The SG- 401 actuator type photointerrupter combined

HS9516B-4

Abstract: HS9516B-5 HS9516B-6 HS9516C-4 HS9516C-5 HS9516C-6 HS 9516C-6
Contextual Info: Hybrid Systems W W CORPORATION HS 9516 Complete 0.0008% Accurate 16-Bit ADC FEATURES • ■ ■ ■ ■ ■ ■ ■ True 16-bit (±0.0008%) Linearity Error Full 16-bit Resolution (1 part in 65,536) No Missing Codes (16-bits) 0°C to +70°C Six User Selectable Input Ranges

M7810

Abstract: DNS-80 GM71C4
Contextual Info: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition

Contextual Info: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation

Contextual Info: CS-298 2A Dual H-Bridge Driver D escription Features The emitters of the lower transistors of each bridge are connected together and the corresponding pins SENSE A/SENSE B can be connected to a sense resistor which, when used with an appropriate external circuit, can detect load faults or

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

JIS-C-0806

Abstract: ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13 tb1208
Contextual Info: ENS120-15 > i;3 g±SSA i>t y y - ' < : Outline Drawings SILICON SURGE ABSORBERS « «rît m 01 r □ □ CO o \ U 02 •J- K « * fldtsuA.tifea ' □y h 7.6± 0.3 cm I— 1,6± 0.3 l.6±0.3 I ¿±0.1 JjMinirrO M a x i m u m Ratings a n d Ch ara c te ri s ti c s

TPS608A

Abstract: tps607 TLN10 TLN107A TLN107A-A TLN107A-B TPS607A
Contextual Info: TOSHIBA TLN107A TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN107A Unit in mm INFRARED LED FOR PHOTO INTERRUTER OPTO-ELECTRONIC SWITCH 4 , INFRARED RAYS APPLIED EQUIPMENT • • High radiant intensity Excellent linearity of radiant intensity and modulation by pulse

infrared ml13

Abstract: CN304
Contextual Info: C I N T E R F A C E INC I D E D | 0 0 5 5 3 5 3 QQDQi|Mg Q [ CN304 T-fl-IS' STANLEY INFRARED LED I Package Dimensions •FEATURES 1 U ltra-high radiant power GaAIAs type (P o = 9 m W TYP.) (2) 880nm peak wavelenghth (3) Ultra-highspeed response (4) W ide directivity (A 0 = 3 5 d e g .)

Contextual Info: UNCONTROLLED DOCUMENT REV. A 1,40 [0 ,05 5 ] PART N UM BER REV. OED-CLR44C90-TR A E.C.N. N U M B E R AN D R E V ISIO N C O M M E N T S DATE E.C.N. # 1 1 1 4 8 . 5 .1 6 .0 7 CATHΠDE MARK 1 3.60 [0.142] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X I_ PARAMETER

Contextual Info: GP1S56T SHARP GP1S56T Compact, High Sensing Accuracy Type Photointerrupter with Positioning Pin • Features ■ OuHne Dim ensions 1. H igh sensing a c c u ra c y Slit w idth : 0.15mm 2. C o m pact (Case h eig h t ! 7.5mm) 3. W ith p ositioning pin (U n it : m m )

SA9C

Contextual Info: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili­

EL-1L2

Abstract: el1l1 EL-23G irf 940 10MSEC
Contextual Info: t t M INFRARED EMITTING PiOI E GaAs) e EL1L1, 1L2 EL-1L1, E L-1 L2 Ü , 'A W z .tf*'s m m r*IE - JU K è f t j f c S W * G a A s ^ S B fc S f-f * - K T T o U >X*fc * 77 U- DIMENSIONS (U n it:m m ) y iI|S ie ii É < , S a $ C 4 o T L ' f t o EL-1L1 The EL-1 L I and E L -1 L 2 are high-pow er GaAs IREDs

photoisolator

Abstract: PD504 PS504
Contextual Info: A C INTERFACE S ta T : - ' - INC 10E D | 00533Ô3 ~ : OoodMHt, ^ 4 I — b " ÜC T'V-il STANLEY INFRARED LED • FEATURES 1 High emission output (Typ. 1.5 mW /srat I f = 2 0 mA) (2) Best suited for photointerrupter (3) Effective when used in combination with

GMM791000

Abstract: GM71C1000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BS is an 1M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 1M bit DRAM GM71C1000BJ, lM xl in 20/26 pin small out-line J-form on a 30 pin single in-line package. These are a socket type memory module, suitable for easy

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. OED —ELL2832C60 3 ,2 0 h 2.80 c o n o : [ 0 ,1 2 6 ] 0 2 ,6 0 2 .1 5 [ 0 0 ,1 0 2 ] [ 0 .0 8 5 ] ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C PARAMETER MIN PEAK WAVELENGTH ANÛD[ CATHÛD[ SPECTRAL BANDWIDTH 5D FORWARD VOLTAGE

BN401

Abstract: I401
Contextual Info: A C INTERFACE INC 1QE D [ Q0S33fl3 OQODMB? 3 Niamey. BN401 J.-W 'H ' STANLEY INFRARED LED • Package Dimensions ■ FEATURES 1 High emission output (T yp . 0.8m W /sr at I f = 20m A ) (2) High directivity (3) Short distance from resin-mold surface to em itting position

N305

Abstract: Radian
Contextual Info: A C INTERFACE INC IDE D | 0023303 000041S 7 | ÂN305 N ia m e y . T -H I-H . STAN LEY IN FR A R ED LED unit:mm±o.2 > • P ackage Dim ensions ■FEATURES (1 High radiant power GaAs type (Po = 8m W TYP.) (2) 950nm peak wavelength (3) Narrow directivity(A0=18deg.)achieves a

1S274

Abstract: RZ3135B50W
Contextual Info: N AUER PHILIPS/DISCRETE ^ 53=131 0015273 ObE D c RZ3135B50W T - 3 5 - »3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3,1 to 3,5 GHz.

MSM411001-10RS

Abstract: MSM411001-12RS
Contextual Info: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >

Contextual Info: T O SH IB A MG100Q1ZS40 MG1 00 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O SH IB A MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.