RADIAN Search Results

Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA

TEFD4300

Abstract: APPLICATION CIRCUIT OF TSAL4400
Contextual Info: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times

Contextual Info: TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity

pn photodiode

Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm

TSTS710

Contextual Info: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack­ age. Their glass lenses provide a very high radiant

Contextual Info: SIEMENS SFH2115 GaAs ENERGY CONVERTER Package Dimensions in mm FEATURES • • • • 8 Diodes Connected in Serle* T 0 18 Package Floating Output Signal FC Connector for use with 200 Fiber, NA=0.37 Characteristics TA=25“C Parameter Radiant Input Power

TSTA7100

Contextual Info: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant

diode t25 4

Abstract: diode t25 4 fo sfh siemens
Contextual Info: SIEMENS SFH 4445 tRANSCEIVEROPTICALlWODULE Package Dimensions in mm FEATURES Maximum Ratings * Bidirectional Module with Integrated WDM * Emission Wavelength: 1300 nm * Suitable or Bit Rates up to 565 Mbit/s * Ternary Photodiode at Rear Mirror for Monitoring and Control of Radiant

lm 7914

Abstract: kostal
Contextual Info: Tem ic TSKS5412X01 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Side View Package Description TSKS5412 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in

Contextual Info: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant

8021C

Contextual Info: Tem ic TSTS730. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description The TSTS730. series are infrared emitting diodes in stan­ dard GaAs technology in a hermetically sealed T O -18 package. Their glass lenses provide a high radiant inten­

Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.

laser light source

Abstract: LASER 3mW LN7301S 15-30mA
Contextual Info: Panasonic Semiconductor Laser LN7301S 1.3|im Band InGaAsP Semiconductor Laser Light source for optical fiber communications • Features • Low threshold current • High-efficiency • High-speed response • Built in PIN photodiode used for radiant power monitor

optical sensor

Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
Contextual Info: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.

tic 105

Contextual Info: • ABSOLUTE MAXIMUM RATINGS Ta=25°C • Storage Temperature Range . . • Operating Temperature- 30°C ~ + iOOcC - 25 °C - + 60°(’ ■ ELECTRICAL AND RADIANT CHARACTERISTICS ( Ta=25T: )

Contextual Info: 10RS RADIANT ENERGY Series Special Purpose Controls Snap-Action Radiant Control The 10RS line of controls from Therm-O-Disc offers reliable sensing of radiant energy in hot surface ignition applications. The unique snap-action bimetal design not only provides high-speed contact separation and

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter Area not fla t SFH 205 SFH 206 Radiant sensitive area Cathode i L •«-; r-s _ t o -si 1 _ A- 3.7 GE0Û665 A p pro x. w e ig h t 0 .25 g Area not fla t 0 .6 x 0 .5

Contextual Info: HFE4837 High Speed Fiber Optic LED FI8Efl209.TIF D ESCRIPTIO N The HFE4837 is a high radiance GaAIAs 850 nanometer LED optimized for coupling into small fiber core diameters at a forward current of 10 to 100 mA. The patented "Caprock" LED chip combines high power

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g

OPF370A

Abstract: OPF370B OPF370C OPF370D
Contextual Info: OPTEK Product Bulletin OPF370 January 1998 Fiber Optic GaAIAs LED Types OPF370A, OPF37QB, OPF37QC, OPF37ÛD Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Electrically Isolated plastic cap package • High radiant output for fiber optic

DDD173S

Abstract: OP290 OP291 OP292
Contextual Info: This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 0 .O P I E K Types OP290, OP291, OP292 Series Typical Performance Curvet Perrant Chang« in Radiant

1105W-RR

Abstract: AN1105W
Contextual Info: AN1105W Surface Mount IRED/Dome Lens Type Features Package Product features 3216 Dome lens type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.85mm L x W x H ・High Radiant Intensity : 1.4mW/sr TYP. (IF=20mA) ・Total Output Power : 2mW TYP. (IF=20mA)