100JO Search Results

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

Contextual Info: r n m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. p KSC RPN M m D DmE Dm 23APR2013 LOGO CHANGE AM JC KZ MECHANICAL: A MATERIALS: HOU SING - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T IN G UL 9 ^ V - 0 . S H IE L D - .010" THICK, C 268 00 B R A S S P R E P L A T E D WITH 3 0n lN C H S E M I - B R I G H T

LCX374

Abstract: 74LCX374 74LCX374MSA 74LCX374MSAX 74LCX374SJ 74LCX374SJX 74LCX374WM 74LCX374WMX
Contextual Info: LCX374 N ß a t i o n a l S e m i c o n d u c t o r 74LCX374 Low-Voltage Octal D Flip-Flop with 5V Tolerant Inputs and Outputs General Description Features The LCX374 consists of eight D-type flip-flops featuring sep­ arate D-type inputs for each flip-flop and TRI-STATE out­

Contextual Info: r r i \ [ LTC1286/LTC1298 TECHNOLOGY Micropower Sampling 12-Bit Serial I/O A/D Converters \ m A u g u s t 1993 F€ATUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1286/LTC1298 are micropower, 12-bit, sucessive approximation sampling A/D converters. They draw only

2N5309

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

D33D30

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4425

Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

tcnl 100

Contextual Info: / T _ LT1210 u TECHNOLOGY r m 1.1 A, 35M Hz C u rre n t F e e d b a c k A m p lifie r F€OTUR€S DCSCRIPTIOn • 1.1A Minimum Output Drive Current ■ 35MHz Bandwidth, Ay = 2, RL = 10Q ■ 900V/,us Slew Rate, Ay = 2, RL = 10i2 The LT 1210 is a current feedback amplifier with high

Contextual Info: um LT1311 TECHNOLOGY Q uad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for O ptical Disk Drives F€fflUR€S D € S C R IP T IO n • Four Complete Current-to-Voltage Converters ■ 14-Lead Small Outline Package ■ Accurate Gain: 20mV/|jA, ±4%

Contextual Info: r m COPYRIGHT BT TCP CONNECTOR MECHANICAL: ALL RIGHTS RESERVED. R 1-Rif = 75 OHMS, 1/16 W, 5 % R E S IS T O R S C1 = 1000 pF, 2 kV DECOUPLING C A PA C IT O R L n A E JC 23APR2013 LOGO CHANGE KZ M ATERIALS: H O U S IN G - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T IN G UL 9 4 V - 0 .

2N4256

Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4424

Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40

"to-98" package

Abstract: 2N5355 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V hFE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

80-DF

Abstract: 100MF 35v lt1149
Contextual Info: uTECHNOLOGY i m ^ L T C IM LTC1149- TCI 149-5 High Efficiency Synchronous Step-Down Switching Regulators FCOTUfteS A DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load

B00ST1

Abstract: M21 diode NDS8926
Contextual Info: ra E ^ E L E Â S E LTC1702/LTC1703 L ir m TECHNOLOGY Dual 550kHz Synchronous 5V-to-2.x/l .xV Switching Regulator Controllers with VID D ecem ber 1998 F € f ìT U R € S D C S C R IP T IO n • Two Independent Controllers in One Package ■ LTC1703 Side 1 Output Is Compliant with the Intel

Royer oscillator circuit diagram

Abstract: 0465R LT1786F smb pig tail sda 2023 b MOSFET Royer oscillator 1733G
Contextual Info: TECHNOLOGY SM BusProgrom m oble CCFL Sw itching R egulator to-lamp-current control” and communicates using the 2-wire SMBus serial interface. The LT1786F acts as an SMBus slave device using one of two selectable SMBus addresses set by the address pin ADR.

30GWJ2C11

Abstract: 12-25B1A 30GWJ2C12 30FWJ2C11 30FWJ2C12 1225B1 12-39A1A TOSHIBA RECTIFIER TF150t
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 0 '7~-St2rÒ5' 39C 023^5 RECTIFIER STACK (SCNQTTKY BARRIER DIODE STACK) ~3T DE I TOTTSSD 0005345 fl | . 30GWJ2C11 Unit 40V 30A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak Reverse 30FWJ2C11 Voltage 30GWJ2C11 Average Output Rectified Current (Fig. 1)

2N4256

Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

2N5232

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306 2N5309
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN

Contextual Info: r n m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. E MECHANICAL: A 23APR2013 LOGO CHANGE JC KZ M A T ERIALS: H OUS IN G - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T IN G UL 9 W - 0 . S H IE L D - .010" THICK, C 26 8 0 0 B R A S S P R E P L A T E D WITH 3 0nl NC H MIN S E M I - B R I G H T