10OJIA Search Results

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

28C64A

Abstract: A12C HA11
Contextual Info: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

SGS-Thomson m27c4001

Abstract: CMOS J601 27c4001 M27C4001 M27C4001-12F1
Contextual Info: JAN 2 2 199T SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA VERY FAST ACCESS TIME : 100ns. COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz . Standby current 10OjiA.

557 timer connections

Abstract: 1N914 M28C64C PDIP28 PLCC32 RB810
Contextual Info: / = T S G S - ltiO M S O N [ L ifê T M K M M 2 8 C 6 4 C PARALLEL ACCESS CMOS 64K 8K x 8 EEPROM • FAST ACCESS TIME: 150, 200ns ■ SINGLE SUPPLY VOLTAGE: 5V ± 10% ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA ■ FAST WRITE CYCLE:

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

Contextual Info: y UC5603 UNITRODE 9-Line SCSI Active Terminator FEATURES DESCRIPTION • The UC5603 provides 9 lines of active termination for a SCSI Small Comput­ ers Systems Interface parallel bus. The SCSI standard recommends active termination at both ends of the cable segment.

518128

Abstract: 518128apl TC518128
Contextual Info: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V

Contextual Info: SIEMENS ICs for Communications RF/IF Double PLL Frequency Synthesizer PM B2347 Version 1.1 Preliminary Specification 27 p a g e s in cl. th is p a g e 05.99 Edition 08.98 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,

TC1173

Contextual Info: ¡eluom Semiconductor, Inc. TC1173 300mA CMOS LDO WITH SHUTDOWN, ERROR OUTPUT, AND BYPASS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC1173 is a precision output typically ±0.5% CMOS low dropout regulator. Total supply current is typi­ cally 50jxA at full load (20 to 60 times lower than in bipolar

Contextual Info: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high

2sk1380

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1380 Field Effect Transistor U n it in m m Silicon N Channel MOSType L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

BA604

Contextual Info: VtSHAY _ BA604 ▼ Vishay Telefunken Silicon Planar Diode Applications G eneral purpose 94 9371 Absolute Maximum Ratings Tj = 2 5 °C P aram eter Test C onditions Type S ym bol Value Unit v rsm 80 V vr 50 V Peak reverse voltage, non repetitive

UC2906 UC3906

Contextual Info: y U C2906 U C3906 U N IT R O D E Sealed Lead-Acid Battery Charger FEATURES D E S C R IP T IO N • Optimum Control for Maximum Battery Capacity and Lite • Internal State Logic Provides Three Charge States • Precision Reference Tracks Battery Requirements Over

Contextual Info: UC1914 UC2914 UC3914 U N IT R O D E 5V to 35V Hot Swap Power Manager FEATURES • 5V to 35V Operation • Precision Maximum Current Control • Precision Fault Threshold Programmable Average Power Limiting Programmable Overcurrent Limit Shutdown Control Charge Pump for Low RDSon

op400

Abstract: powerful OP-400 J135 pir schematic AN-120 D65013 151E-6
Contextual Info: ANALOG DEVICES AN-120 APPLICATION NOTE ► ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 OP-400 SPICE Macro-Model by Joe Buxton INTRODUCTION This application note describes the SPICE macro-model for the OP-400 quad low-offset, low-power operational amplifier. This

Contextual Info: Semiconductor, Inc. TC 1173 300mA CMOS LDO WITH SHUTDOWN, ERROR OUTPUT AND BYPASS FEATURES GENERAL DESCRIPTION • The TC1281 combines a Low Dropout Regulator and a Microprocessor Monitor in a space-saving 8-pin MSOP package. Total supply current is typical 50|aA, 20 to 60 times

Contextual Info: MICROCHIP TECHNOL OGY INC 22E D blD3SDl 00QM7T7 ñ 27HC64 M ic r o c h ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time • CMOS Technology For Low Power Consumption — 80mA Active Current

Circuit diagram of Regulated Power supply 6V 5A

Abstract: L4955 L4955V5 L4955VXXX AL05A 4522V lb 11880 ezo19
Contextual Info: / = 7 SG S-TH O M SO N • 7 / L4955 RülD glS ilLi(ê1îl@MlD(gf 5A LOW DROP LINEAR REGULATORS FAMILY PRODUCT PREVIEW ■ a ■ ■ ■ . 1 ■ ■ ■ 5A OUTPUT CURRENT ±1 % PRECISE OUTPUT VOLTAGES FAST TRANSIENT RESPONSE 0.75V TYP. AT 5A DROP OUT VOLTAGE

Contextual Info: ICL7621,ICL7641 ¡S i H a r r i s U U 7642 S E M I C O N D U C T O R ICL76XX Series Low Power CM OS O perational Am plifiers March 1993 Features Description • Wide Operating Voltage R ange.±1V to ±8V The ICL761X/762X/764X series is a fam ily of monolithic

VP12C

Abstract: RC2951 supertex
Contextual Info: FAIRCHILD s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC2951 A djustable M ic r o p o w e r Voltage Regulator Description • • • • • • • • • • • The RC295 l i s a voltage regulator specifically designed to maintain proper regulation with a very low dropout voltage

SN55450

Abstract: SN75450B sg75450bj SG75450 SG55470J sn75450 sg55470 SG75460J SG55450BJ/883B Transistor 2y
Contextual Info: SG55450B/60/70 SERIES SILICON GENERÄL LINEAR IN TEGRATED C IRCUITS DUAL PERIPHERAL POSITIVE-AND DRIVER DESCRIPTION FEATURES The SG55450B/SG55460/SG55470 SG75450B/SG75460/SG75470 series of dual peripheral Posltive-AND drivers are a family of versatile devices designed for use in systems that employ TTL or DTL logic. This

Contextual Info: mu Single Channel Optocoupler 66116 Electrically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages O PTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High reliability Base lead provided for conventional transistor

Contextual Info: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon