100NS Search Results

1r5nu41

Contextual Info: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns

Contextual Info: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS

28F512A

Abstract: 28F512A-12
Contextual Info: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12

Contextual Info: 1GU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1GU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 400V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type.

8X13

Contextual Info: tm TE CH Preliminary T15S256A CMOS STATIC RAM SRAM 32K X 8 LOW POWER FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 50/70/85/100ns The T15S256A is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 1.2V to 1.8V power supply. Data

14Q7

Contextual Info: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: SILICON DIFFUSED TYPE SUPER FAST RECOVERY RECTIFIER U05NU44 SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetivier Peak Reverse Voltage : Vrrji=1000V . Average Forward Current p : If a V =0.5A . Very Fast Reverse-Recovery Time : trr=100ns(Max.)

PDM31096

Abstract: PDM31096LL
Contextual Info: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this

j515

Abstract: J515-5
Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S S20L60 600V 20A •h iîjï • t r r 100ns • ejcô'/JvïïU m m •P F C •S R S ÎÜ •^ B s O A .F A R A TIN G S Absolute Maximum Ratings a i 5 E - fSymbol Conditions

1JU41

Contextual Info: TOSHIBA 1JU41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU41 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current ÏF (AV) —1-OA • Repetitive Peak Reverse Voltage V r r m = 600V • Reverse Recovery Time trr= 100ns (Max.)

Contextual Info: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this

82S185

Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
Contextual Info: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector

2SK1331

Contextual Info: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: IDT7130SA/LA IDT7140SA/LA CMOS DUAL-PORT RAM 8K 1Kx 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 inPLCC and TQFP • Low-power operation

Contextual Info: J ] H A R R IS R T X 2 1 A PRELIMINARY Real Time Express™ Microcontroller Decem ber 1989 Features • Description Fast 100ns Machine Cycle The RTX 2001A is a 16-bit microcontroller which is particu­ larly well suited for very high speed control tasks which are

dt7130

Contextual Info: INTEGRATE» DEVICE k& E D • MÖ25771 GGia^? SSb ■ IDT IDT7130SA/LA IDT7140SA/LA C M O S D U A L -P O R T RAM 8K 1K x 8-B IT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.)

Contextual Info: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation

6264alp

Abstract: 6264ALSP-10
Contextual Info: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •

idt7130

Contextual Info: IDT7130SA/LA IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns max. — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns 7130 in PLCC and TQFP