100-10L WD Search Results

Contextual Info: ISTf VITELIC V53C129A FAMILY HIGH PERFORMANCE, LOW POWER 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM WITH WRITE-PER-BIT CAPABILITY HIGH PERFORMANCE V53C129A PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)

Contextual Info: kf VITELIC V53C866 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT STA TIC COLUMN CMOS DYNAMIC RAM 70/70L HIGH PERFORMANCE V53C866 80/80L 10/10L 12/12L M ax. R A S Access Tim e, *RAC 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Tim e, (tCAA) 35 ns

Q001

Abstract: DHR48 V53C464
Contextual Info: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)

V53C466

Abstract: DQQ0400 vitelic V53C466 lawo M54510
Contextual Info: VITELIC VITELIC CORP ifl D ÌJ ^505310 DQQ0400 7 T-V6-Z3-/7 V 5 3C 4 66 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT S TA TIC CO LUM N CMOS DYN A M IC RAM 70/70L 8 0 /8 0 L 10/10L Max. RAS Access Time, t ^ 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tCAA

Contextual Info: kf VITELIC “ V53C 466 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT STATIC COLUMN CMOS DYNAM IC RAM 70/70L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns 55 ns Min. Fast Page Mode Cycle Time, ts w c tSRC

F643242B

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

M5M41000B-7L

Contextual Info: MITSUBISHI LSIs M5M41000BP,J.L,VP,RV-7L,-8L,-10L FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 1 -BIT DYNAMIC RAM DESCRIPTIO N PIN C O N F IG U R A T IO N (TOP V IE W ) T his is a fa m ily o f 1 0 4 8 5 7 6 -w o rd b y 1 -b it d y n a m ic R A M s,

Contextual Info: MITSUBISHI LSIs M5M4441QAWJ,J'LJP, RT-6L,-7L,-8L,-10L FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 4-B IT D YN A M IC RAM DESCRIPTION T his is a fa m ily o f 1 0 4 8 5 7 6 -w o rd b y 4 -b it d y n a m ic R A M S , PIN CONFIGURATION (TOP VIEW)

l64324

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

RT9363A

Contextual Info: RT9363A 3 Channels 90mA x1/x2 Charge Pump White LED Driver General Description Features The RT9363A is a compact, high efficient and highly integrated charge pump white LED driver. It maintains the highest efficiency by utilizing a x1/x2 fractional charge

RT9363

Abstract: WDFN-10
Contextual Info: RT9363A 3 Channels 90mA x1/x2 Charge Pump White LED Driver General Description Features The RT9363A is a compact, high efficient and highly integrated charge pump white LED driver. It maintains the highest efficiency by utilizing a x1/x2 fractional charge

Contextual Info: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

internal block diagram of mobile phone

Abstract: RT9287 SS0520 WDFN10 fbgp
Contextual Info: RT9287 Preliminary Boost Converter for OLED Power with Dual LDO General Description Features The RT9287 integrates a boost converter for OLED power and a Dual LDO for camera image sensor power. To achieve high efficiency, the boost converter optimizes its operating

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM M B81F64442B-103E/-103/-10/-103L/-1O L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: 57E D • FA C Q R 34ST32S OOODbSe 7A1 « F G R S RGP30A FAGOR ELECTRONICS RGP30M ^T-03-lS V'iJ • 3 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. s “I s 1 1— 1 D0-201 AD DO-27 A Plastic Voltage 50 to 1.000 V. Current 3.0 A. at 55 °C.

HVR-062

Abstract: HALF WAVE RECTIFIER do-201ae RGP30 RGP30 MS RGP30A RGP30M HVR062
Contextual Info: 57E D • 34ST32S OOODbSe 7A1 « F G R S FA Tj O K RGP30A FAGOR ELECTRONICS RGP30M 'T'-Q3-lS V'iJ • 3 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. s “I s 1 1— 1 D0-201 AD DO-27 A Plastic Voltage 50 to 1.000 V. Current 3.0 A. at 55 °C.

Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM M B81F64842B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic RandorftAccesS: Memory SDRAM containing

Contextual Info: SM39R04G1 8-Bit Micro-controller 4KB with ISP Flash & 256B RAM embedded Description . 3

A72A

Abstract: GP1A72A 5 pin transistor 3 amp meca wd 3pin
Contextual Info: GP1A72A Small Size OPIC Photointerrupter with Connector GP1A72A Unit : mm , Features 1. Compact type 2. Snap-in mounting type 3. 3-pin connector terminal • ❞ Internal connection diagram - Vm Wu!ata ✍ 1. Copiers 2. Laser beam printers 3. Facsimiles

DFN 3x3 PACKAGE

Abstract: RT9004
Contextual Info: RT9004 Preliminary 300mA, Low Noise, Ultra-Fast CMOS Triple LDOs Regulator General Description Features The RT9004 is designed for portable RF and wireless applications with demanding performance and space requirements. The RT9004 performance is optimized for