4X512 Search Results

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: ^EDI EDI9F416512C ELECTRONIC DESIGN5INC.I 4x512Kx16 SRAM Module 4x512Kx16 Static RAM CMOS, Module Features 4x512Kx16 bit CMOS Static The EDI9F416512C is a 32Megabit CMOS Static RAM Random Access Memory based on eight 512Kx8 Static RAMs mounted on a multi­

WED2DG472512V-D2

Contextual Info: WED2DG472512V-D2 16MB 4x512Kx72 SYNC BURSTPIPELINE, DUAL KEY DIMM ADVANCED* FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FIG. 1 4x512Kx72 Synchronous, Synchronous Burst Pipeline Architecture; Single Cycle Deselect

133MHZ

Abstract: WED2EG472512V-D2
Contextual Info: White Electronic Designs WED2EG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST PIPELINE, DUAL KEY DIMM FEATURES DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The

Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

AM29LV004T

Abstract: EDI7F33512V eco 9230
Contextual Info: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in

AM290F040

Contextual Info: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each

Contextual Info: WPF2M32B-90PSC5 UVHITE / M IC R O E L E C T R O N IC S 4x512Kx32 5V FLASH SIMM PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ 100,000 E ra se/P ro gra m Cycles ■ Packaging: ■ O rganized as fo u r banks o f 512Kx32 • 8 0 -p in S IM M ■ C om m e rcial T e m p e ra tu re Range

WED2DG472512V-D2

Contextual Info: White Electronic Designs WED2DG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION FEATURES The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The

512k x 8 chip block diagram

Abstract: AMD 705 AM29LV004T EDI7F33512V
Contextual Info: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and

Contextual Info: m WPF2M32B-90PSC5 I/I/HITE /M ICRO ELECT R O N IC S 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ A c c e s s Time of 90 n s 100,000 Erase/Program Cycles Packaging: ■ Organized a s four banks of 5 1 2K x32 • 80-pin S I M M ■ Com m ercial Tem perature Range

332 Ic 8 pin

Abstract: 4X512K ic 331
Contextual Info: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer

367 al

Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

104 white noise

Abstract: WED2DG472512V-D2
Contextual Info: White Electronic Designs WED2DG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION FEATURES „ 4x512Kx72 Synchronous, Synchronous Burst „ Pipeline Architecture; Single Cycle Deselect „ Linear and Sequential Burst Support via MODE pin

Contextual Info: White Electronic Designs WED2CG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION FEATURES n 4x512Kx72 Synchronous, Synchronous Burst n Flow-Through Architecture n Linear and Sequential Burst Support via MODE pin

Contextual Info: White Electronic Designs WED2DG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION FEATURES n 4x512Kx72 Synchronous, Synchronous Burst n Pipeline Architecture; Single Cycle Deselect n Linear and Sequential Burst Support via MODE pin

Contextual Info: W DI EDI7F33512V 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in Block Diagrams

Contextual Info: ! 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: ■ Organized a s four banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 C M O S

Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

F643242B

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

WED2CG472512V-D2

Contextual Info: White Electronic Designs WED2CG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION FEATURES The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The

Contextual Info: TT I/I/HITE /MICROELECTRONICS 4x512Kx32 5V FLASH S IM M W PF2M32B-90PSC5 PRELIMINARY' FEATURES • Access Time of 90ns 100,000 Erase/Program Cycles ■ Packaging: Organized as four banks of 512Kx32 • 80-pin SIMM Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 CMOS

14mmx20mm

Abstract: GW 94 H
Contextual Info: WED2DG472512V-D2 16MB 4x512Kx72 SYNC BURSTPIPELINE, DUAL KEY DIMM ADVANCED* FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FIG. 1 4x512Kx72 Synchronous, Synchronous Burst Pipeline Architecture; Single Cycle Deselect