100 AMP POWER TRANSISTOR Search Results

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

LH0041 equivalent

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)

Contextual Info: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45

transistor 1 j42

Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation

UF28156

Abstract: UF2815B L5 mosfet
Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation

BC372

Abstract: ic-250mA CTO-92
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

2N4300

Contextual Info: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic

2N4301

Abstract: TCA 321 tip30c TIP29 TIP30 TIP30A TIP30B
Contextual Info: TIP 30 Series PNP POWER TRANSISTORS -40 ~ -100 VOLTS -1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP29 SERIES The TIP30 Series power transistors are designed for use in general purpose amplifier and switching applications. Features: • Designed for complementary use with TIP29 series

GE3055P

Abstract: c 693 530TC
Contextual Info: GE3055P NPN POWER TRANSISTORS 80 VOLTS 10 AMP, 70 WATTS General purpose transistor designed for power regulator, switching and solenoid drive applications. Features: • High gain at high current: hFE = 20 ~ 100 @ N/CE = 4V, lc = 4A EMITTER CASE STYLE TO-247S

UF28100M

Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

D78A3D2

Contextual Info: D78A3D2 NPN POWER DARLINGTON TRANSISTOR ARRAY 100 VOLTS 3 AMP, 25 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 4 in 1 CASE STYLE SIP-12 PIN

D55A7

Abstract: D55A D54A7D
Contextual Info: D55A7p PNP POWER DARLINGTON TRANSISTORS -100 VOLTS -7 AMP, 30 WA1 rrs Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High DC Current Gain: hF E = 2000 Min. (at V c E = -3V, lc = ~3A) CASE STYLE TO-220IS

743 ic

Abstract: JE13009 MJE13009 IC 741 AMP
Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

1.1vdc

Abstract: 25ADC
Contextual Info: SFT5553A/G Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 5 AMP 100 Volts PNP Power Transistor

Contextual Info: PRELIMINARY SFT5553A/E SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 5 AMP 100 VOLTS PNP POWER TRANSISTOR DESIGNER'S DATA SHEET Part Number /Ordering Information 1/ SFT5553A/ E HB TX

transistor 257

Contextual Info: SFT5553A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 5 AMP 100 Volts PNP Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

C1673

Abstract: digital blood pressure circuit diagram AD6481 AD621 AD621A AD621AN AD621AR AD621B AD621BN AD621BR
Contextual Info: a Low Drift, Low Power Instrumentation Amplifier AD621 FEATURES EASY TO USE Pin-Strappable Gains of 10 & 100 All Errors Specified for Total System Performance Higher Performance than Discrete In-Amp Designs Available in 8-Pin DIP and SOIC Low Power, 1.3 mA max Supply Current

2n5076

Abstract: 2N5077
Contextual Info: high-rei power transistors 85 - 1 I SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp NORMALIZED CURRENT GAIN 200 ~ TA=lS0C ~ ISO w "- ~, ~ ~ ~ z• TAO 25°C ;( 100 C> I VCE '5V I- Z W Qi: SO a: ~ -. U TA: -SSoC o .01 .001 COllECTOR CURRENT, IC (AMPS) COllECTOR

4707 N Channel MOSFETs

Abstract: MSK3014
Contextual Info: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

CLC103AI

Abstract: CLC103 CLC103AM OP BASEBAND 80MHZ wideband op amp National Semiconductor 16 Pin Dip
Contextual Info: N Comlinear CLC103 Fast Settling, High Current Wideband Op Amp General Description Features • ■ ■ ■ ■ 80MHz full-power bandwidth 20Vpp, 100Ω 200mA output current 0.4% settling in 10ns 600V/µs slew rate 4ns rise and fall times (20V) Applications

AD621

Contextual Info: JUN 3 r 1 « i' ANALOG ► DEVICES FEATURES EASY TO USE Pin-Strappable Gains of 10 & 100 All Errors Specified for Total System Performance Higher Performance than Discrete In-Amp Designs Available in 8-Pin DIP and SOIC Low Power, 1.3 mA max Supply Current

S2V90

Abstract: schematic weigh scale low cost AD621 AD621 equivalent AD621A AD621AN AD621AR AD621B AD621BN AD621BR
Contextual Info: a Low Drift, Low Power Instrumentation Amplifier AD621 CONNECTION DIAGRAM 8-Lead Plastic Mini-DIP N , Cerdip (Q) and SOIC (R) Packages FEATURES EASY TO USE Pin-Strappable Gains of 10 and 100 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs