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    100 AMP POWER TRANSISTOR Search Results

    100 AMP POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    100 AMP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


    Original     		UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43 PDF

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


    Original     		UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer PDF

    AV061

    Abstract: BA3912 574 nohm av052 BA3900 BA3910 AV032 D0127 AV05
    Contextual Info: BA3912 Power supply, standard voltage Features • available in an SIP-M12 package • multiple voltages available from the same IC R1.8 — 5.6 V for microcomputer — 8.55 V (two; one for FM and one for AM radio) — 9.0 V (radio power supply) • all output ci rcuits use a PN P transistor


    OCR Scan     		BA3912 SIP-M12 0D127G3 AV061 BA3912 574 nohm av052 BA3900 BA3910 AV032 D0127 AV05 PDF

    NTE2314

    Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
    Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo


    OCR Scan     		NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ PDF

    BD788G

    Abstract: BD787G BD788 MSD6100 1N5825 BD787
    Contextual Info: BD787 − NPN, BD788 − PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features http://onsemi.com • Low Collector−Emitter Sustaining Voltage − VCEO sus 60 Vdc (Min)


    Original     		BD787 BD788 BD787/D BD788G BD787G MSD6100 1N5825 PDF

    MJE-15031

    Abstract: transistor mje15030g MJE15030G MJE15028G ic 7710 MJE15031G MJE15028 MJE15029 MJE15029G MJE15030
    Contextual Info: MJE15028, MJE15030 NPN MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 4.0 Amperes


    Original     		MJE15028, MJE15030 MJE15029, MJE15031 MJE15029 MJE15030, O-220AB MJE15028/D MJE-15031 transistor mje15030g MJE15030G MJE15028G ic 7710 MJE15031G MJE15028 MJE15029 MJE15029G MJE15030 PDF

    MJD112G DPAK

    Abstract: darlington tip31
    Contextual Info: MJD112, NJVMJD112T4G NPN , MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,


    Original     		MJD112, NJVMJD112T4G MJD117, NJVMJD117T4G TIP31 TIP32 AEC-Q101 MJD112/D MJD112G DPAK darlington tip31 PDF

    1N5825

    Abstract: 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284
    Contextual Info: ON Semiconductort NPN 2N6283 Darlington Complementary Silicon Power Transistors 2N6284 . . . designed for general−purpose amplifier and low−frequency switching applications. PNP 2N6286 • High DC Current Gain @ IC = 10 Adc − • • w hFE = 2400 Typ − 2N6284


    Original     		2N6283 2N6284 2N6286 2N6287 2N6284/D 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284 PDF

    mje243 transistor

    Abstract: MJE253 MJE243 equivalent MJE243
    Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original     		MJE243 MJE253 MJE243, r14525 MJE243/D mje243 transistor MJE253 MJE243 equivalent MJE243 PDF

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp
    Contextual Info: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • • w hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		2N6052* 2N6058 2N6059* 2N6052, 2N6059 2N6052/D 1N5825 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp PDF

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc


    Original     		2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB r14525 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100 PDF

    pin orientation for bdx53c transistor

    Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
    Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D pin orientation for bdx53c transistor box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100 PDF

    MJE700G

    Abstract: MJE700 1N5825 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 TO-225
    Contextual Info: MJE700, MJE702, MJE703 PNP − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC


    Original     		MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 MJE800 MJE700G 1N5825 MJE702 MJE703 MJE802 MJE803 MSD6100 TO-225 PDF

    2SC2908

    Contextual Info: ¿2&M0SPEC NPN SILICON POWER TRANSISTORS .designed for use in power amplifier and switching circuits . FEA TU RES: *Collector-Emitter Sustaining Voltage^ ceo sus - 100 V (Min) * Collector-Emitter Saturation Voltage - 5.0 AMPERE SILICON POWER TRANASISTORS


    OCR Scan     		2SC2908 10bi-10b2--Â 150VPJlsd PDF

    TIP31 NPN Transistor diagram

    Abstract: darlington tip31 TIP31CG TIP32CG TIP31AG 6 pin to-220 power switching ic transistors TIP32 tip32a equivalent transistor tip31c TIP32 equivalent
    Contextual Info: TIP31, TIP31A, TIP31B, TIP31C, NPN , TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		TIP31, TIP31A, TIP31B, TIP31C, TIP32, TIP32A, TIP32B, TIP32C, O-220AB TIP31 NPN Transistor diagram darlington tip31 TIP31CG TIP32CG TIP31AG 6 pin to-220 power switching ic transistors TIP32 tip32a equivalent transistor tip31c TIP32 equivalent PDF

    MJE181

    Abstract: MJE182 MJE172 MJE180 MJE170 MJE171 mje17c HF9 transistor
    Contextual Info: ÆàMOS PEC COMPLEMENTARY SILICON PLASTIC PNP MJE170 MJE171 MJE172 POWER TRANSISTORS . designed for low power amplifier and low current, high speed switch» i applications. FEATURES: * Collector-Emitter Sustaining Voltage40 v Min - MJE170.MJE180 = 60 V (Min) - MJE171,MJE181


    OCR Scan     		MJE170 MJE180 MJE171 MJE181 MJE172 MJE182 MJE181 MJE182 MJE180 mje17c HF9 transistor PDF

    TIP102G

    Contextual Info: TIP100, TIP101, TIP102 NPN ; TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − = 2500 (Typ) @ IC


    Original     		TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 TIP105 TIP106 TIP102G PDF

    TIPI22

    Abstract: TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note TIP120 TIP122
    Contextual Info: ÆfcMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP120 TIP121 TIP122 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - TIP120.TIP125


    OCR Scan     		TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP121 TIPI22 TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note PDF

    schematic diagram CORDLESS DRILL

    Abstract: MC2833P low power fm transmitter .47 uH MC2833 MC2833 ic Low power FM transmitter system M1175-A MC2833D M1175A
    Contextual Info: Order this document by MC2833/D MC2833 Low Power FM Transmitter System LOW POWER FM TRANSMITTER SYSTEM MC2833 is a one–chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.


    Original     		MC2833/D MC2833 MC2833 schematic diagram CORDLESS DRILL MC2833P low power fm transmitter .47 uH MC2833 ic Low power FM transmitter system M1175-A MC2833D M1175A PDF

    2SD633

    Abstract: 2SD634 80 amp 30v npn darlington 60 amp npn darlington power transistors 2SD635
    Contextual Info: MOS PEC DARLINGTON SILICON POWER TRANSISTORS NPN .designed for general-purpose amplifier, hammer drive ,pulse motor drive and low speed switching applications. * Collector-Emitter Sustaining VoltageVCEO SUS = 6 0 V (M in )-2 S D 6 3 5 i = 80 V (Min) - 2SD634


    OCR Scan     		2SD635 2SD634 2SD633 2SD634 2SD633 80 amp 30v npn darlington 60 amp npn darlington power transistors 2SD635 PDF

    2SC2625

    Abstract: npn transistor 2sc2625 power transistor 2sc2625 NPN Transistor 400v to247 2SC262 transistor 2sc2625 UNIT JUNCTION TRANSISTOR 2sC2625 transistor
    Contextual Info: /zAMOS PEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, and switchmode applications such as switching regulator's,converters. FEATURES: *Collector-Emitter Sustaining Voltage^ ceo sus =


    OCR Scan     		2SC2625 10AMPERE 2SC2625 npn transistor 2sc2625 power transistor 2sc2625 NPN Transistor 400v to247 2SC262 transistor 2sc2625 UNIT JUNCTION TRANSISTOR 2sC2625 transistor PDF

    sony lcd tv circuits diagrams

    Abstract: television sony LCD display TFTLCD SONY 6.1 CXA3503
    Contextual Info: LCX033AKB 1.1cm 0.44 Type NTSC/PAL Color LCD Panel Description The LCX033AKB is a 1.1cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color


    Original     		LCX033AKB LCX033AKB 115cm sony lcd tv circuits diagrams television sony LCD display TFTLCD SONY 6.1 CXA3503 PDF

    6 pin power switching ic to-220

    Abstract: C-29-B TIP29CG
    Contextual Info: TIP29, A, B, C NPN , TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 AB package. http://onsemi.com Features 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		TIP29, TIP30, O-220 TIP29B/D 6 pin power switching ic to-220 C-29-B TIP29CG PDF

    mj11032 mexico

    Abstract: MJ11032 transistor mj11028 equivalent MJ11028 MJ11029 MJ11033
    Contextual Info: ON Semiconductort NPN MJ11028 High-Current Complementary Silicon Transistors MJ11032* PNP . . . for use as output devices in complementary general purpose amplifier applications. MJ11029 • High DC Current Gain — MJ11033 * • • • hFE = 1000 Min @ IC = 25 Adc


    Original     		MJ11028 MJ11032* MJ11029 MJ11033 r14525 MJ11028/D mj11032 mexico MJ11032 transistor mj11028 equivalent MJ11028 MJ11029 MJ11033 PDF