10 N J 400 V Search Results

ISS380

Abstract: 400-02F sm 2025
Contextual Info: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 11 1 N-Channel Enhancement Mode 2 10 1 11 Preliminary data 10 2 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ

Contextual Info: Precision Low Ohmic Value Resistor CTL05/CTL16/CTL10/CTL18/CTL12/CTL01 Series Chip Resistor HOW TO ORDER CTL 10 R015 F J M Packaging M = 7” Reel 10” Reel for 2512 V = 13” Reel TCR (ppm/°°C) R = +15 X = +25 J = +75 K = +100 N = +350 O = +400 FEATURES

Contextual Info: CURRENT SENSE RESISTORS CTL05/CTL16/CTL10/CTL18/CTL12/CTL01 Series Chip Resistor HOW TO ORDER CTL 10 R015 F J M Packaging M = 7” Reel 10” Reel for 2512 V = 13” Reel TCR (ppm/°°C) R = +15 X = +25 J = +75 K = +100 O = +400 N = +350 FEATURES Resistance as low as 0.001 ohms

RCR70BY-10

Abstract: RCR70BY-8 RCR70BY RCR70BY-12
Contextual Info: 104 - - m h RCR70BY t - r m m i i 20.«s V m i- M V . 7V= 125‘C, * * # *14-:? 7 7, 10, i 2 ! i t s » â j . n u » « * uC TT RCR70BY 4 RCR70BY 6 RCK70BY-8 RC R70BY-10 RCR70BY-I2 V7j aAf 240 360 480 600 720 Vdrm 200 300 400 500 600 Vn.no 160 240 320 400

TIP540

Abstract: TIP539 tca150c bdx 540 2N3440 TIP538 BUY71 TIP-540 bdx 65c
Contextual Info: TYPES TIP538, TIP539. TIP540 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 200 V, 300 V, 400 V Min V BR CEO • 15-A Rated Continuous Collector Current • 125 Watts at 100°C Case Temperature • Min f j of 10 MHz at 10 V, 1 A

Contextual Info: TYPES 2N4416, 2N4416A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO . D L -S 6 81 0 6 4 9 , J A N U A R Y 1968 FOR VHF AM PLIFIER A ND M IX E R APPLICATIONS High Power G a in . . . 10 dB M in at 400 M Hz Low Noise F igure. . . 4 dB M a x af 400 M Hz

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Contextual Info: MegaMOS FET Module VMO 400-02F VDSS D25 RDS on = 200 V = 418 A = 4.2 mQ o1 N-Channel Enhancement Mode 11 I Preliminary data 10 T 2 Maximum Ratings Sym bol Test C onditions VDSS Tj = 25°C to 150°C 200 V vDGR T j = 25°C to 150°C; RGS= 10 k£2 200 V VGS

Contextual Info: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRF740A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

TIP-54

Abstract: TIP51 TIP54
Contextual Info: TYPES TIP51 THRU TIP54 N-P-N SILICON POWER TRANSISTORS • 100 mJ Reverse-Energy Rating • 250 V to 400 V Min V b r CEO • 100 W at 25°C Case Temperature • 5 A Peak Collector Current • 2.5 MHz Min f j at 10 V , 0.2 A TYPES TÏP51, TIP52, TIP53. TIP54

ALPs vcr

Abstract: IC LM 393 N DTM12C-N DTM12E-N DTM12G-N H-17 H-18 vdum200
Contextual Info: 132 — — — DTM 12-N • * jb b i# # * \ \ 4 4 CT0-220 12A O T O TO-220 ■ « « Itiltttt »Li I drm Vtm li'll %' DTM12C-N DTM12E-N DTM12G-N 400 600 VbSM Vdrm Tt , J tsm I 2-t P gm 100 50Hz, 0.5 r GM 10 2 (/S50Hz, dutyS10% ) di/dt T, T,ig ? >u) 5 (/S50Hz, dutyS10% )

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Contextual Info: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl

Contextual Info: IRF720A Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

Contextual Info: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

SEC IRF730

Contextual Info: IRF730 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

743 LEM

Abstract: IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741
Contextual Info: A4 FAIRCHILD s e m i c o n d u c t o r dÊ J 34^74 DDETTDS 1 IRF340-343/IRF740-743 T - ì 1 MTM8N35/8N40 N-Channel Power M O SFET s, 10 A, 350 V/400 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description TO-204AA TO-220AB IRF340 IRF341

Contextual Info: IRFW730S A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFS340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFW/I730A A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V