IRFW730S Search Results
IRFW730S Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFW730S |
|
N-CHANNEL POWER MOSFET | Original | 240.11KB | 7 | ||
| IRFW730S |
|
Advanced Power MOSFET | Scan | 156.41KB | 6 | ||
| IRFW730S |
|
Advance Power MOSFET | Scan | 156.39KB | 6 |
IRFW730S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IRFW730S A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology cn cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 1.0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V |
OCR Scan |
IRFW730S | |
IRFW730S
Abstract: ET-24
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Original |
IRFW730S IRFW730S ET-24 | |
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Contextual Info: IRFW730S A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V |
OCR Scan |
IRFW730S | |
IRFW730SContextual Info: IRFW730S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .0 Î 2 5 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V |
OCR Scan |
IRFW730S IRFW730S | |
IRFW730S
Abstract: 07652
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OCR Scan |
IRFW730S IRFW730S 07652 |