0Q55 Search Results

HBT 01 - 01G

Abstract: DG20
Contextual Info: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]

tc 97101

Abstract: D472
Contextual Info: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out

ks9241

Contextual Info: PRELIMINARY CMOS INTEGRATED CIRCUIT KS9241B CD-ROM DECODER 80 —QFP —1420C The KS9241B is a CD-ROM Decoder LSI for Real Time Data Decoding and Host Interface. It Is Suitable for CD-ROM Driver, CD-1 Players. FEATURES • • • • • • Corresponds to CD-ROM Mode 1 and CD-I (Mode 2) Formats.

DM-48

Abstract: WJ 73 1113M NPHT DM4-S
Contextual Info: PRELIMINARY M IC R O N 1 MT18LD472 X 4 MEG x 72 DRAM MODULE DRAM MODULE 4 MEG x 72 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JE D E C -stan d ard ECC p in o u t in a 168-pin, du al-in -lin e m e m o ry m o d u le (DIM M )

CSB512

Abstract: TC8830AF 3si1 tc8830 AN 15525
Contextual Info: D Q S 4 tm TOS H IB A 1. =114 « T O S B UC/UP TC8830AF-1 h ^z »• GENERAL The TC8830AF is a single chip CMOS LSI for voice recording / playback using the ADM ( Adaptive Delta Modulation ). I t composes a voice recording system with a static RAM for voice

Contextual Info: O K I Semiconductor MSC23T/D4720A-xxBS18 4,194,304-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D4720A-xxBS18 is a fully decoded 4,194,304-word x 72-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs 4M x 4 in TSOP or SOJ

LM27555

Contextual Info: N EC MOS INTEGRATED CIRCUIT MC-421000A8,421000A9 SERIES 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C - 4 2 1 0 0 0 A 8 is a 1 0 4 8 5 7 6 w o r d s b y 8 b its d y n a m ic R A M m o d u le o n w h ic h 2 p ie c e s o f * M D R A M

DM50P

Contextual Info: PRELIMINARY I^ IC R D N 1 MEG DRAM M ODULE MT4LD T 164(X) 64 DRAM MODULE X 1 M EG x 64 8 MEGABYTE, 3.3' 8 MEGABYTE’ a3V’ FASTPAGE0R EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process

RG307

Abstract: RG-307 K3050 116-RG307 b1590 305-0042 626-70 M49142 49142
Contextual Info: RED INDICATES ORIGINAL MTA a V fT A M l IN T H IS _ _ nOFBIETARY TO W U LH & E C T I» Z tS D C . MC SHALL NOT BE OISCLDSH . OPIED R USD □ASH CONNECTOR NO TYPE A INCH .005 .030 .096 .109 .140 .156 .172 .218 .221 .281 .284 .297 .437 .500 .505 .510

Contextual Info: DENSE-PAC 1152 Megabit CMOS DRAM MICROSYSTEMS DP3D16MS72PKW5 ADVANCED INFORMATION D ESCRIPTIO N : The DP3D16MS72PKW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks

Contextual Info: MITSUBISHI cCONTROL / DRIVER IC> M54125L/P EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION The M54125 is a semiconductor integrated circuit consisting of an amplifier for high-speed earth leakage circuit breaker. PIN CONFIGURATION TOP VIEW pT Capacitor Output OUT

SCC2691AC1N24

Abstract: diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312
Contextual Info: S'îE D NAPC/ SIGNETICS Signetics bbS3T24 GDSSIST 1 .7=7Sr-37-ar SCC2691 Universal Asynchronous Receiver/Transmitter UART Product Specification Communications and Industrial Products Group c PIN CONFIGURATIONS DESCRIPTION FEATURES The Signetics SCC2691 Universal Asyn­

3Q28

Contextual Info: •43 Y U N D I I I - • / 8 M X 6 4 B IT S D R A M S O D IM M Z -S E R IE S based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V84800/ HYM7V64801/ HYM7V6483Q/ HYM7V64831 D ES C R IPTIO N The HYM7V64800/ 64801/ 64830/ 64831 Z-Series are high speed 3.3-Volt synchronous dynamic RAM

tcl 2027

Abstract: tad 2032 PA1310 5sd4
Contextual Info: Section 20 Electrical Characteristics 20.1 Absolute Maximum Ratings Table 20.1 Absolute Maximum Ratings Item Symbol Rating Unit Power supply voltage v cc -0.3 to +7.0 V Program voltage Vpp -0.3 to +13.5 V Input voltage except port C Vin —0.3 to Vqq + 0.3

h995

Contextual Info: ADVANCE M IC R O N 1 M T9LD 272 B N , M T18LD 472 B(N) 2, 4 MEG X 72 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line m em ory m odule (DIMM)

Contextual Info: bb53T31 0025751 20b « A P X BZV90 SERIES b?E D N AI1ER PHILIPS/DISCRETE _ J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT223 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 wor/js by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.

dual tracking power supply

Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
Contextual Info: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/

dlp 445 nm

Abstract: BYV74F M1982
Contextual Info: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE SSE D • bbS3T31 0022fc.m 5 ■ ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES

SLE 4404

Abstract: Siemens SLE SLE4404C 416B GTM05366 SLE4404M2
Contextual Info: SIEM EN S Intelligent 416-Bit EEPROM with Internal PIN Check S L E 4404 Features • 416 x 1 bit organization • 208-bit user memory which can be configured as ROM , P R O M , read-protected P R O M and read-protected RO M • User memory protected by means of a changeable user

D1875

Abstract: signetics 2692 D1875 transistor diagram remote control receiver and transmitter SCC2692 SCC2692AA1F28 SCC2692AA1F40 SCC2692AA1N40 SCC2692AC1F28 SCC2692AC1F40
Contextual Info: N A P C / 'S I G N E T I C S ETE D • bbS3TE4 GGSSQT3 S 7 ^ 7 s :- 3 7 - o ir Signetics SCC2692 Dual Asynchronous Receiver/ Transmitter DUART Product Specification Microprocessor Division DESCRIPTION The Signetics SCC2692 Dual Universal Asynchronous Receiver/Transmitter (DU­

gp516

Abstract: GP514
Contextual Info: 17E D 3075001 0G2535b h U Radiation-Hardened Hlgh-Rellability ICs G E SOLID STATE GP514/1RZ Advance Information T - S 2 - 1 3 - S High-Reliability, Radiation-Hardened CMOS/SOS Double-Address Select Unit Aerospace C lass S Screening Features: • M ultiplexes two seq uencer output fields

Contextual Info: O K I Semiconductor MSC23T/D1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The O K I MSC23T/D1720C-xxBS18 is a fu lly decoded 1,048,576-word x 72-bit C M O S Dynam ic Random Access M em ory M odule composed of eighteen 4-Mb D R A M s 1M x 4 in T SO P or SO J

511000B/BL-60

Abstract: hyb 511
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60