0P53 Search Results

cm2141

Abstract: l 871i OP530
Contextual Info: OPTEK TECHNOLOGY INC Ot.E D | bV^fiSäO O p to e le c tr o n ic s . D iv is io n T R W Electronic Components Group 7 ? r V Product Bulletin 5 1 1 6 January 1985 NPN Silicon Photodarlington Type QP530 A b s o lu te M a x im u m R a t in g s H a - 2 5 °C unless otherwise noted

Contextual Info: OPTEK TECHNOLOGY INC ObE D | b7^flSflD OOQDlSfl M | t O p to e le c tro n ic s D iv is io n T R W Electronic C o m p o n e n ts G ro u p J — | J M "“ J5 Product Bulletin 5 1 1 8 January 1995 l\IPN Silicon Photodarlington Types OP538F, OP538FC, OP538FB, OP538FA

D789407A

Abstract: 78F9418
Contextual Info: _ DATA SHEET_ / MOS INTEGRATED CIRCUIT ¿¿PD789405A, 789406A, 789407A, 789415A, 789416A, 789417A 8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿ PD789405A, 789406A, 789407A, 789415A, 789416A, and 789417A are products in the ¿¡PD789407A and

OP168F

Abstract: OP538F OP538FA OP538FB OP538FC T070
Contextual Info: OPTEK Product Bulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54 mm) hole centers

AN006

Abstract: t-1 phototransistor
Contextual Info: OPTEK TE CH NOLOGY INC ObE I> | b 7 c]0SaO □ □□OlGt. 7 | Optoelectronics Division TRW Electronic Components Group Product Bulletin 5042 January 1985 - r - H M I 7 7 ? n GaAs Plastic Infrared Emitting Diodes Types OP16QSL, OP1GOSLD, OP16QSLC, OP160S LB, QP160SLA

AXP 223

Contextual Info: O R OPTEK Product Bulletin OP168F June 1996 G aAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch

Contextual Info: OPTEK TEC HN OL OG Y INC ObE D | t.7ciflSaO O p to e le c tro n ic s. D iv is io n # ? rV T R W Electronic C o m p o n e n ts G ro u p Product Bulletin 5 1 1 6 January 1985 N P N Silicon Photodarlington Type QP530 A b s o lu te M e x im u m R a tin g s H a - 2 5 °C unless otherwise noted

LT746

Abstract: tdk fcr CG208 1S1211 JPD75P216A PD75CG208 400M-2
Contextual Info: N E C ELECTRONICS INC 3QE D NEC NEC Electronics Inc. Description The /iPD7520x/7521x is a family of single-chlp CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, a FiP controller/driver, subsystem clock, and serial interface.

M38223M4

Abstract: 3B16 M38223M4-XXXFP CLB 2711 LCD LM 234
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3822 User’s Manual Group MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

f2141

Abstract: SA-27 OP260SL OP260SLB
Contextual Info: OPTEK TECHNOLOGY INC Ofc>E D I 000012a b 7 = Ì S S flQ Optoelectronics Division I T - m - i& TRW Electronic Components Group f f ? îr V Product Bulletin S066 January 1985 GaAIAs Plastic Infrared Emitting Diodes Types 0P260SL, OP26QSLC, QP260SLB, QP260SLA

Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3822 User’s Manual Group MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

trw resistor

Abstract: KSS 240a OP168F OP538F OP538FA OP538FB
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^flSflD O O Q D 1SÖ M | O p to e le c tro n ic s D iv is io n ._ T R W Electronic C om ponents Group . v . / MÊXWW T -M 1 - o 3 Product Bulletin 5 118 January 1995 N P N Silicon Photodarlington Types 0 P 5 3 8 F, 0 P 5 3 8 FC , O P 5 3 8 FB , 0 P 5 3 8 FA

OP260SL

Abstract: trw diodes TMB3
Contextual Info: OPTEK TECHN OLO GY INC ObE D | t.7ciflSaO Optoelectronics. Division T R W Electronic C o m pone nts G roup 7 ? r V Product Bulletin 5116 January 1985 NPN Silicon Photodarlington Type QP530 Absolute Meximum Ratings H a - 25°C unless otherwise noted • Lensed for high sensitivity

st 2901

Abstract: LM 339 N LM 339 LM2901-MC3302 LM339 LM2901M ic lm 339 lm239 ST MLM139 pin for lm 339 ic
Contextual Info: • Æ 7^237 0G 230cib 7 'T - T 3 - S 3 LM139, A LM239,A-LM339,A LM2901-MC3302 S G S -T H O M S O N ÿ J M LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS G S- TH OM SO N 3DE » • WIDE SINGLE SUPPLY VOLTAGE RANGE OR DUAL SUPPLIES FOR ALL DEVICES : + 2 V TO

0PB708

Abstract: B709 OP500 IOPB709 QPB708 QPB709 TRW OPB709 em 223 0PB709
Contextual Info: OPTEK TECHNOLOGY INC DbE D | b7*iflSaD O p to e le c tro n ic s D iv is io n Q | T-MI-T3 T R W Electronic Com ponents Group T R ww ftoduct Bulletin 5288 January 1985 Reflective Object Sensors Types QPB708, QPB709 .590 14.89 •025 (0.84) . 'CATH ODE LEAD. OTHER LEADS ARE .01 (1.52)

Contextual Info: OP TE K T E C H N O L O G Y 7 t-hmi TRYw INC ObE ]> | L ^ Û S ê O Optoelectronics Division T R W Electronic Com ponents Group Product Bulletin 5042 January 1985 □□□GIGt | GaAs Plastic Infrared Emitting Diodes Types QP160SL, OP1GOSLD, OPI6OSLC, OP 160S LB, OP16QSLA

ASEA EG 20

Abstract: mml 600 FW-100 OP168F OP538F OP538FA OP538FB 3Z32
Contextual Info: OPTEK TECHNOLOGY INC OkE D | t71SSSD DDOaiSä 4 | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group ‘ TiWV T - m - io 3 Product Bulletin 5118 January 1995 N P N Silicon Pho to darlin g to n Types OP538F, OP538FC, OP538FB, OP538FA F e a tu r e s

7 SEGMENT DISPLAY basic CIRCUIT

Abstract: tc 106-10 12 volts 5 AH battery BC 148 TRANSISTOR PIN CONFIGURATION hl 1616 M38223M4 three and half digit 7 SEGMENT LCD DISPLAY 3B16 M38223M4-XXXFP Bd P6d
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PD75268

Abstract: uPD75268 fip 450 P33C 3RD-6657A uPD752
Contextual Info: NEC NEC Electronics Inc. Description The /¿PD75268 is a low-cost, high-performance, single­ chip CMOS microcomputer containing CPU, ROM, RAM, I/O ports, several timer/counters, a FIP controller, vec­ tored interrupts, main and subsystem clocks, and serial

0P165

Abstract: K9000 OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

K9000

Abstract: OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon