OP538F Search Results

Contextual Info: OPTEK TECHNOLOGY INC ObE D | b7^flSflD OOQDlSfl M | t O p to e le c tro n ic s D iv is io n T R W Electronic C o m p o n e n ts G ro u p J — | J M "“ J5 Product Bulletin 5 1 1 8 January 1995 l\IPN Silicon Photodarlington Types OP538F, OP538FC, OP538FB, OP538FA

OP168F

Abstract: OP538F OP538FA OP538FB OP538FC T070
Contextual Info: OPTEK Product Bulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54 mm) hole centers

Contextual Info: 0 .O F M P rod uct B ulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC ¡1 1 Features A b so lu te Maxim um R atings T a = 25° C unless otherwise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54

OP168F

Abstract: OP538F OP538FA OP538FB OP538FC
Contextual Info: @ O P IEK P ro d u c t B ulletin O P 5 3 8 F J u n e 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC A b s o lu te M axim um R a tin g s T a = 2 5 ° C u n le s s o th e rw is e noted • Flat iensed for wide acceptance angle • E asily stackable on 0.100 inch (2.54

Contextual Info: ¡0 O P T E K Product Bulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54

ASEA EG 20

Abstract: mml 600 FW-100 OP168F OP538F OP538FA OP538FB 3Z32
Contextual Info: OPTEK TECHNOLOGY INC OkE D | t71SSSD DDOaiSä 4 | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group ‘ TiWV T - m - io 3 Product Bulletin 5118 January 1995 N P N Silicon Pho to darlin g to n Types OP538F, OP538FC, OP538FB, OP538FA F e a tu r e s

AXP 223

Abstract: OP168F OP168FA OP168FB OP168FC OP508F OP538F
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes T y p e s O P 168 FA , O P 168 F B , O P 168 FC Features • • Flat lensed for wide radiation angle Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

OP168F

Abstract: OP168FA OP168FB OP538F 5113si
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^asaa a a o a n a T-41-U 7771V Optoelectronics Division T R W Electronic Components Group Product Bulletin 5051 January 1985 a | G a A s Plastic Infrared Em itting Diodes Types OP168F, OP168FD, OP168FB, OP168FA Features Absolute Maximum Ratings ITa - 25°C unless otherwise noted

Contextual Info: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP168F

Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

OP268FA

Abstract: OP268FB OP268FC OP508F OP538F
Contextual Info: OPTEK Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC • Flat lensed for wide radiation angle • Easily stackable on 0.100" 2.54 mm hole centers • Mechanically and spectrally matched to the OP508F series phototransistor

OP268FA

Contextual Info: @ OPTEK Product Bulletin OP268F April 1993 ^ GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC DIMENSIONS ARE III INCHES IMILLIMETERSi 'FDR IDENTIFICATION PURPOSES. ANODE LEAD IS .06 I I . 52! NOM. LONGER THAN CATHODE LEAD Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

J-10

Abstract: OP168F OP168FA OP168FB OP168FC OP538F
Contextual Info: OPTEK TE C HN OL OGY INC ObE D I bT'îflSflD ODODllS 5 I O p to electron ics D iv is io n THYw T - m - u T R W Electronic Components Group Product Bulletin 5051 January 1985 G a A s P la stic Infrared Em ittin g Diodes Types O P 16 8 F, O P 16 8 FD , OP 16 8 FB , O P 16 8 FA

trw resistor

Abstract: KSS 240a OP168F OP538F OP538FA OP538FB
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^flSflD O O Q D 1SÖ M | O p to e le c tro n ic s D iv is io n ._ T R W Electronic C om ponents Group . v . / MÊXWW T -M 1 - o 3 Product Bulletin 5 118 January 1995 N P N Silicon Photodarlington Types 0 P 5 3 8 F, 0 P 5 3 8 FC , O P 5 3 8 FB , 0 P 5 3 8 FA

OP168F

Abstract: OP168FA OP168FB OP168FC OP508F OP538F 300pps Infrared Emitting Diodes
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC .065 1.65 .055 (1.40) .130 (3.30) .120 (3.05)' EMITTING SURFACE □ •165 (4.19) .155 (3.94) .090 (2.29) .070 (1.78) .100 (2.54) NOM J_ T

Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on

Contextual Info: 0 O P T E K Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC Features • Flat tensed for wide radiation angle • Easily stackable on 0.100’ (2.54 mm hole centers • Mechanically and spectrally matched

Contextual Info: 0 OPTEK Product Bulletin OP168F April 1993 GaAs Plastic Infrared Emitting Diodes Types OPT68FA, OP168FB, OP168FC • Flat lensed for wide radiation angle • Easily stackable on 0.100-inch (2.54mm hole centers • Mechanically and spectrally matched to the OP506F series phototransistor

OPB711

Abstract: OPB712 REFLECTIVE OBJECT SENSOR OP168F OP268 OP508F OP538F photo darlington sensor reflective photo sensor DARLINGTON phototransistor 14
Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on