0P50 Search Results

OP169SL

Abstract: OP509SLC OP509SLD
Contextual Info: OPTEK TEC HNOLOGY INC ObE D | L ^ û S â O 0000154 7 Optoelectronics- D ivision TRW E le c tro n ic C o m p o n e n ts G r o u p Product Bulletin 5 1 1 4 TRYw | Ja n u a ry 19 8 5 N P N Silicon Phototransistors Types QP509, OP5Q9SLD, 0P509SLC Features Ab solu te M a xim u m Ra tings

cm2141

Abstract: ti7c OP260SL OP501SR
Contextual Info: OPTEK TECHNOLOGY INC ObE D I ti7ciâSôO DOOÜ1SO □ I Optoelectronics D iv isio n TiTwV T R W Electronic Components Group Product Bulletin 5098 January 1985 Infrared Selected NPN Silicon Phototransistors Types OP5Q1SR, 0P501SRD, OP501SRC. OP501SRB, 0P501SRA

Contextual Info: 77?vV OPTEK TECHNOLOGY INC ObE D g fc.7ia5fl0 DDOÜ1SD □ I Optoelectronics D ivis io n T R W Electronic Components Group P ro d u c t Bulletin 5 0 9 8 Ja n u a ry 19 8 5 Infrared Selected NPN Silicon Phototransistors Types OP5Q1SR, 0P501SRD, OP501SRC. OP5Q1SRB, 0P501SRA

cm2141

Abstract: IF-20 OP500 OP501 OP501SLB 11Rma OP501SLA
Contextual Info: OPTEK TECHNOLOGY INC DbE D | L^flSflD QOOOlMfi 1 | O p to e le c tro n ic s D iv is io n - b T R W Electronic Com ponents Group 7 ? rV Product Bulletin 5097 January 1965 NPI\I Silicon Phototransistors Types 0P5Q1, OP5Q1SLD, 0P501SLC, OP5Q1SLB, OP5Q1SLA F e a tu r e s

Contextual Info: OPTEK TECHNOLOGY INC ObE D I L71&S&Q DDGG144 4 | Optoelectronics Division T R W Electronic Com ponents Group T ! r A - Product Bulletin 5094 January 1985 Infrared Selected NPN Silicon Phototransistors Types QP500SR, OP5QOSRD, QP500SRC, 0P50QSRB, OP5QOSRA DIMENSIONS ARE IN INCHES MILLIMETERS .

OP500SRB

Abstract: PV100A 850-030 corector OP500SR OP500SRA OP500SRC OP500SRD
Contextual Info: OPTEK TECHNOLOGY INC ObE D | ^7^8500 □□□DIMM 4 | Optoelectronics Division T R W Electronic Components Group V ? iV Product Bulletin 5 0 9 4 J an uary 1 9 85 Infrared Selected NPN Silicon Phototransistors Types 0P500SR, 0P500SRD, QP500SRC, OP500SRB, QP500SRA

Photosensor

Abstract: OP505 OP165 OPS665 OPS666 OPS667
Contextual Info: OPTEK Product Bulletin OPS665 July 1996 LED and Photosensor Pair Types OPS665, OPS666, OPS667 OP 165 I .1 2 5 3 . IB .1 1 5 (2 .9 2 ) .2 0 0 (5 .0 8 ) .1 8 0 (4 .5 7 ) .0 5 0 .CATHODE . j t X (0 .7 6 )NOM MEASUREMENT SURFACE — — — 0P505 (4 .1 9 )

cm2141

Abstract: OP601 OP260SL OP501SR OP501SRB OP501SRC OP501SRD
Contextual Info: OPTEK TECHNOLOGY INC ObE D g tiT^aSôO OODOISD □ O p to e le c tr o n ic s D i v i s i o n T R W Electronic C om ponents Group Product Bulletin 5098 TiTwV I January 1985 Infrared Selected N P N Silicon Phototransistors Types OP5Q1SR, 0P501SRD, OP501SRC. ÜP501SRB, 0P501SRA

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L71flSflQ 0000146 1 | Optoelectronics Division - b T RW Electronic Components Group Product Bulletin 5097 January 1965 'R Y w NPN Silicon Phototransistors Types 0P5Q1, 0P5Q1SLD, 0P501SLC, 0P5Q1SLB, 0P5Q1SLA Features • 0 .1 0 0 " 12.54 mm} lead spacing

OPS666

Contextual Info: OPTEK Product Bulletin OPS665 July 1996 LED and Photosensor Pair Types OPS665, OPS666, OPS667 .200 5 •08 .180 (4.57) 1 .165 (4.19) ' .145 (3.68) .125 (3.18) .lt5 (2.92) 1 .025 (0.64) .015 (0.38) .030^0. 76) - MEASUREMENT SURFACE 0P505 » FOR IDENTIFICATION PURPOSES.

TI-131

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K

OP500W

Abstract: 11C1 diode p OP160W ICEO151
Contextual Info: OPTEK TECHNOLOGY INC QbE D g L h O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group a s s a & 0 0 0 0 1 4 b T -m -io i I 7 V ? rV Product Bulletin 5095 Janu ary 1965 lUPN Silicon P h o to tra n s is to r Type QP500W . 11512.92 - . 5 0 0 12.7) .

AXP 223

Abstract: OP168F OP168FA OP168FB OP168FC OP508F OP538F
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes T y p e s O P 168 FA , O P 168 F B , O P 168 FC Features • • Flat lensed for wide radiation angle Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

pmi op50

Abstract: ic PMI OP50 OP-50 OP-50AY OP-50EY OP50 0P-50
Contextual Info: High-Output-Current Operational Amplifier A^ > 5 0P-50 ANALOG DEVICES □ FEATU RES • Open-Loop G a in . . . 10.000.000V/V Min • Low Input onset Voltage _ . 25MV Max • Low Input Mas Current. • ExeeHent TCVo«. .Q.3*iV/°C Max

Contextual Info: OPJEK TECHNOLOGY INC ObE D | LVTASAO □□□□142 □ | O p to e le ctro n ics D iv is io n 7 *- t f / - £>/ T R W Electronic Components Group i m r Product Bulletin 5093 January 1985 N P N Silicon Phototransistors Types OP5QO, OP5QOSLD, OP5QOSLC, OP5GOSLB, QP500SLA

Contextual Info: OPTEK TECHNOLOGY INC OhE D | bTTÛSflO 0000114 b | Optoelectronics Division T-4»-| T R W Electronic Components Group Product Bulletin S054 January 1985 7#?«rV GaAs Plastic Infrared Emitting Diodes Types OP169SL, OP169SLD, OP169SLC .050 1.27) .165(4.18)'

OP168F

Abstract: OP168FA OP168FB OP538F 5113si
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^asaa a a o a n a T-41-U 7771V Optoelectronics Division T R W Electronic Components Group Product Bulletin 5051 January 1985 a | G a A s Plastic Infrared Em itting Diodes Types OP168F, OP168FD, OP168FB, OP168FA Features Absolute Maximum Ratings ITa - 25°C unless otherwise noted

pmi op50

Abstract: OP-50 OP-50E OP-50EY 1sv 134 op50
Contextual Info: ANALOG DEVICES FEATURES • Open-Loop Qatn High-Output-Current Operational Amplifier AS,EL > 5 0P-50 ORDERINQ INFORMATION! . 10,000,000V/V Min . 12SdB Min • L o w lM e e .5.SnW > /H r@ l = 10Hi

syfer 1210 capacitor

Abstract: 6p20 5P60
Contextual Info: Dimensions �� 0505/1111 High Q, Low ESR Capacitors �� � � � �� � �� �� �� Chip Size 0505 Chip Size 1111 Length L1 1.4mm ± 0.38mm (0.055” ± 0.015”) Length (L1) + 0.51mm (+ 0.020”) 2.79mm (0.110”) – 0.25 mm (– 0.010”)

AN006

Abstract: t-1 phototransistor
Contextual Info: OPTEK TE CH NOLOGY INC ObE I> | b 7 c]0SaO □ □□OlGt. 7 | Optoelectronics Division TRW Electronic Components Group Product Bulletin 5042 January 1985 - r - H M I 7 7 ? n GaAs Plastic Infrared Emitting Diodes Types OP16QSL, OP1GOSLD, OP16QSLC, OP160S LB, QP160SLA

STR D 5095

Contextual Info: OPTEK TECHNOLOGY INC QbE D £ bTTflSflO D O O O m b fl | O p to e le c tr o n ic s D iv is io n T R W Electronic C om ponents Group Product Bulletin 5095 January 1985 l\IPIV Silicon Phototransistor Type OP5QOW DIMENSIONS M E IN INCHES MIUIMETERSI. F e a tu re s

TRF370315

Abstract: TRF370417 DAC5687 IS-136 APC025 Keystone Electronics
Contextual Info: TRF370417 www.ti.com SLWS213 – JANUARY 2010 50-MHz TO 6-GHz QUADRATURE MODULATOR Check for Samples: TRF370417 FEATURES APPLICATIONS • • • • • • • • • • • • 1 • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8

OP165

Abstract: OP505 OPS665 OPS666 OPS667
Contextual Info: OPTEK Product Bulletin OPS665 July 1996 LED and Photosensor Pair Types OPS665, OPS666, OPS667 Features Storage and Operating T e m pe ratu re. -40° C to +100° C Lead Soldering Temperature [1/16 inch 1.6 mm from case for 5 sec. with soldering

AXP 223

Contextual Info: O R OPTEK Product Bulletin OP168F June 1996 G aAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch