OP50 Search Results

TI-131

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K

OP265W

Abstract: OP505W
Contextual Info: 0 . OPTEK Product Bulletin OP265W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP265W IBB WËÈlÊÉÊmmlÊÈËÊSêSk i l W Ê ^m tB Ê K sm H N ta i III Features • W ide irradiance pattern • Mechanically and spectrally matched to the OP505W

T35 diode

Abstract: ndm diode diode L2.70 OP165W OP505W diode T35 diode T35 -4-D6
Contextual Info: 0 .OPTEK Product Bulletin O P 165W Jun e 1996 GaAs Plastic Infrared Emitting Diode Type OP165W • Wide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited applications • T-1 package style Reverse Voltage. 2.0 V

OP506W

Abstract: S-7600
Contextual Info: P ro d u c t B u lle tin O P506W bTTÖSflO 0 0 0 2 b l 7 OPTEK 701 J u n e 1996 NPN Silicon Phototransistor Type QP506W • Wide receiving angle • T-1 package style • Small package size for space limited applications D e s c rip tio n The OP506W consists of an NPN silicon

Contextual Info: Product Bulletin OP5Û6W OPTEK b7TÔSÔD DDOEhl? 701 • June 1996 NPN Silicon Phototransistor Type OP5Q6W Features • Wide receiving angle • T-1 package style • Small package size for space limited applications Description The OP506W consists of an NPN silicon

AXP 221

Abstract: 0P166W
Contextual Info: OPTEK Product Bulletin OP166W June 1996 GaAs Plastic Infrared Emitting Diode Type OP166W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP506W • Small package size for space limited applications • T-1 package style

smd transistor A1

Abstract: smd transistor A1 3 PIN smd transistor A1 4 PIN chip die npn transistor transistor smd A1 SMD Transistor A1 80 transistor a1 smd OP501DA
Contextual Info: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: x x x x x High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens

smd transistor a4

Abstract: OP501DA
Contextual Info: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens

SMD PLCC-2 1210

Abstract: smd transistor nm OP505 circuit VCSEL lens array TRANSISTOR 935 SMD Plastic Encapsulate Diodes OP233 935 diode smd transistor A 935 opv302
Contextual Info: 1742-2012:QuarkCatalogTempNew 9/17/12 4:59 PM Page 1742 TEST & MEASUREMENT 20 Optical Components A subsidiary of TT electronics plc Phototransistors Vertical Cavity Surface Emitting Laser VCSEL RoHS OPV380 OPV302 OPV382 OPV332 OP802SL OP802WSL OP505 OP506

76V0

Contextual Info: 42106 Mii OPERATIONAL AMPLIFIER DSCC DWG #5962-87620 MICROCIRCUITS DIVISION Replacement for OP501, PA51 Features: Applications: • • • • • • • • Wide Supply Voltage Range (±10 to ±40 Volts) High Output Current (10A Peak) Small Size (TO-3, 8 Pins)

Contextual Info: @ QFTEK Product Bulletin OP505W June 1996 NPN Silicon Phototransistor Type OP505W Features • Wide receiving angle • T-1 package style • Small package size for space limited applications Coilector-Emitter Voltage. 30 V

OP506A

Abstract: OP506B OP506C OP506D
Contextual Info: 0 . OPTEK Product Bulletin OP5Û6A June 1996 NPN Silicon Phototransistors Types QP506A, OP506B, OP506C, QP506D « • • • Narrow receiving angle Variety of sensitivity ranges T-1 package style Small package size for space limited applications C ollector-Emitter V o lta g e . 30 V

cm2141

Abstract: ti7c OP260SL OP501SR
Contextual Info: OPTEK TECHNOLOGY INC ObE D I ti7ciâSôO DOOÜ1SO □ I Optoelectronics D iv isio n TiTwV T R W Electronic Components Group Product Bulletin 5098 January 1985 Infrared Selected NPN Silicon Phototransistors Types OP5Q1SR, 0P501SRD, OP501SRC. OP501SRB, 0P501SRA

ai 972

Abstract: K6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535 E5B0
Contextual Info: 0 OPTEK P ro d u c t B u lle tin O P165A J u n e 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D F e a tu re s • Narrow irradiance pattern • Mechanically and spectrally matched to the OP505 and OP535 series devices • Variety of power ranges

K660

Abstract: K6600 OP265 OP265A OP265B OP265C OP265D OP505 OP535
Contextual Info: . OPTEK P roduct B ulletin OP265A June 1996 GaAIAs Plastic Infrared Emitting Diodes T yp e s OP265A, OP265B, OP265C, OP265D Features • • Narrow irradiance pattern Mechanically and spectrally matched to the OP505, OP535 series devices • Significantly higher power output than

5962-8762001

Abstract: OP501 OPA501 PA51 SYNCHRO DRIVER
Contextual Info: 42106 Mii OPERATIONAL AMPLIFIER DSCC DWG #5962-8762001 HYBRID MICROELECTRONICS PRODUCTS DIVISION Replacement for OP501, PA51 Features: Applications: • • • • • • • • Wide Supply Voltage Range (±10 to ±40 Volts) High Output Current (10A Peak)

Contextual Info: 77?vV OPTEK TECHNOLOGY INC ObE D g fc.7ia5fl0 DDOÜ1SD □ I Optoelectronics D ivis io n T R W Electronic Components Group P ro d u c t Bulletin 5 0 9 8 Ja n u a ry 19 8 5 Infrared Selected NPN Silicon Phototransistors Types OP5Q1SR, 0P501SRD, OP501SRC. OP5Q1SRB, 0P501SRA

Contextual Info: . O PTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • W ide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited

QP508FB

Contextual Info: . O PTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • • Flat lensed for w ide acceptance angle Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

Contextual Info: 0 OPTEK Product Bulletin OP166A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP166A, OP166B, OP166C, OP166D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP506 series phototransistors • Variety of S ensitivity ranges

OP508FA

Contextual Info: OPTEK TECHNOLOGY INC DfaE D | blTflSäO DDDGISE 3 | g O p to e le c tr o n ic * D i v i i i o n T R W Electronic Components Group Product Bulletin 5 1 1 2 mmm « v v a _ T - 4 1 - U I January 1985 N P N Silicon Phototransistors Types OP5Q8FC, OP508FB, OP508FA

OP506A

Abstract: OP506B OP506C OP506D
Contextual Info: OPTEK Product Bulletin OP5Û6A June 1996 NPN Silicon Phototransistors Types OP506A, OP5Q6B, OP5Q6C, OP5Q6D Features • • • • Narrow receiving angle Variety of sensitivity ranges T-1 package style Small package size for space limited applications Description

smd transistor a4

Abstract: a4 smd transistor transistor SMD a4 smd diode A4 smd a4 transistor LED photo darlington transistor IC PACKAGE OP501DA DARLINGTON SMD TRANSISTOR OP500 A4 smd transistor A4
Contextual Info: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens

OP168F

Abstract: OP290C OP508F OP508FA OP508FB OP508FC
Contextual Info: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched