0D242 Search Results
0D242 Price and Stock
Torex Semiconductor LTD XC6210D242PR-GLDO Voltage Regulator, Fixed, 1.5 V to 6 V, 1 Output, 2.4V, Positive Output, 700mA, 80mV - Tape and Reel (Alt: XC6210D242PR-G) |
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XC6210D242PR-G | Tape & Reel | 16 Weeks | 1,000 |
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Samtec Inc FFSD-10-D-24.21-01-NCable Assembly Ribbon 0.615m 20 POS IDC to 20 POS IDC RCP-RCP - Bulk (Alt: FFSD-10-D-24.21-01-N) |
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FFSD-10-D-24.21-01-N | Bulk | 1 Weeks, 3 Days | 1 |
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FFSD-10-D-24.21-01-N |
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FFSD-10-D-24.21-01-N | 1 |
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FFSD-10-D-24.21-01-N |
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Torex Semiconductor LTD XC6210D242MR-GLDO Voltage Regulator, Fixed, 1.5 V to 6 V, 1 Output, 2.4V, Positive Output, 700mA, 80mV - Tape and Reel (Alt: XC6210D242MR-G) |
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XC6210D242MR-G | Tape & Reel | 16 Weeks | 3,000 |
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Torex Semiconductor LTD XC6210D242DR-GLDO Voltage Regulator, Fixed, 1.5 V to 6 V, 1 Output, 2.4V, Positive Output, 700mA, 80mV - Tape and Reel (Alt: XC6210D242DR-G) |
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XC6210D242DR-G | Tape & Reel | 16 Weeks | 3,000 |
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Samtec Inc IDSD-10-D-242.00-P19-G- Bulk (Alt: IDSD-10-D-242.00-P19-G) |
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IDSD-10-D-242.00-P19-G | Bulk | 1 |
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IDSD-10-D-242.00-P19-G |
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IDSD-10-D-242.00-P19-G | Bulk | 1 |
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IDSD-10-D-242.00-P19-G | 1 |
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IDSD-10-D-242.00-P19-G |
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0D242 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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USER S MANUAL oki 32 lcd tv
Abstract: USER MANUAL oki 42 lcd tv USER S MANUAL oki 22 lcd tv MSM64155A MSM64P155 QFP100-P-1420-BK USER MANUAL oki 22 lcd tv
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msm64155amsm64155al/64155a256-nibble+9 | |
MSM64153A
Abstract: MSM64P155 SEG23
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msm64153amsm64153al/64153anx-4/20+5 | |
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Contextual Info: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit. |
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km29v16000ats/rs6000a264-byte250ns+2 | |
ENN5340A
Abstract: CC10Q 40110 LB1950V
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enn5340alb1950vcc10q40110 | |
BAS32LContextual Info: •I bb53T31 ODEMHÖM 250 « A P X N AUER PHILIPS/DISCRETE BAS32L b?E » HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-8 OC glass envelope w ith tin-plated |
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bb53t31bas32l | |
Transistor BO 63
Abstract: MPSA63 transistor t0 92
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t0-92mpsa63300ma625mw+3 | |
54175Contextual Info: GEC P L E S S E Y M S E M I C O N D U C T O R S DS3594-3.3 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high |
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ds3594-354hsc/t54/74lscobalt-60+3 | |
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Contextual Info: b S H Tf i S S 005MSES 445 • M IT1 MITSUBISHILSls M5M5256CP,FP,KP,VP,RV-55LL,-55XL, -70LL.-70XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M5M5256CP, FP, KP, VP, RV is a 2 6 2 1 4 4 -bit CMOS static RAMs organized as 3 2 7 6 8 -words by 8 - bits which |
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005msesm5m5256cprv-55ll-55xl+5 | |
ti77
Abstract: BV EI 301
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km29v16000ats/rs250uskm29v16000afigure15+3 | |
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Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
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km29n16000ats/rs250uskm29n16000afigure14+1 | |
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Contextual Info: FLASH MEMORY KM29N32000T/R 4M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array - Data Register The KM29N32000T/R is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND |
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km29n32000t/r528-byte250ns | |
0C314
Abstract: 09d4e 074c "04AA9H" 0496B TMS320 05c62 0144dh SPSS011B 0c314h
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tms320tms320cxx06ea6h07164h+15 | |
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Contextual Info: MEMORY i i i S lllllììl S ^ 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB8118165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118165B is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory |
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mb8118165b-50/-60mb8118165b16-bitc42001s-2c-1+2 | |
S/A3N01Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS3597-2.4 MACROSOS1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS’s Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving |
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ds3597-237bfls2237bfl522s/a3n01 | |
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MFP21Contextual Info: TOSHIBA 54E UC/UP ^ 7 2 4 ^ D DGEHEMD TO SH IBA 1. 377 IT0S3 TM P68901 I -5 Z -3 3 -< 2 > S " INTRODUCTION The TMP68901 multi-function peripheral (MFP) is a member of the TLCS-68000 Fam ily of peripherals. The MFP directly interfaces to the TMP68000 processor via an |
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tmp68901tlcs-68000tmp680000242l+1 | |
L4142Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
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km29v16000at/r250usl4142 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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sx3704ap239transistor 801398c547+6 | |
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Contextual Info: Data Sheet February 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7690 5.0 V DS1/E1 Quad Line Interface T7693 3.3 V DS1/E1 Quad Line Interface Features Description • Four fully integrated DS1/E1 line interfaces The T7690 and T7693 are fully integrated quad line |
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t7690t7693t7290a100-pin | |
transistor c815
Abstract: c815 CMOS differential amplifier cascode SHC615 SHC615AP common emitter amplifier d0245 D0242 i100u
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shc615750mhz280mhz100db+11 | |
GD243
Abstract: K2413 BYX 13 400 R IC RTS 993 for electric bell GD243B D0243 autodata cd 2010 til 3010 datasheet MT90500 MT90500AL
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mt90500ds517164kbpsthroug50+11 | |
fujinon
Abstract: CCD-Sensor FUJINON-TV Zoom 532H LC89901V LC99251GL QQH427S "CCD SENSORS" OS40-302 fujinon lens system
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enn6248lc99251glfujinonccd-sensor+7 | |