0D24 Search Results

E30A23VS

Abstract: A30S
Contextual Info: SEMICONDUCTOR E30A23VS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30S E30A23VS A : Voltage classification 0D24

Contextual Info: bb53T31 0D24073 b03 H A P X Philips Semiconductors Product specification PN4416; PN4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE b?E ]> Q U IC K R E F E R E N C E DATA FEATURES SYM BOL • Low noise • Interchangeability of drain and source connections

BB215

Abstract: UHF diode
Contextual Info: • bbsa'm 0D24M0T 331 HiAPX N AUER PHILIPS/DISCRETE BB215 b?E D UHF VARIABLE CAPACITANCE DIODE The BB215 is a silicon variable capacitance diode in a hermetically sealed glass envelope SOD-8O and intended fo r application in UHF tuners. The leadless SOD-8O encapsulation is intended fo r surface

Contextual Info: b S 4 cî ô2 S 0D2433S 272 • M I T I M 5 M MITSUBISHILSIs 5 2 5 7 B P , J - 1 5 , - 1 7 , - 2 0 , - 2 5 ,- 3 5 , - 2 0 L , - 2 5 L , - 3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static

2 Wavelength Laser Diode

Abstract: 820 nm laser diode multimode COF25B laser diode 780 nm laser diode philips philips potentiometer invisible
Contextual Info: 41E D B3 7110a2b 0D241S5 3 PHIN 1 4 1989 AP D E V E L O P M E N T DATA C Q F 2 5 A /D SERIES C Q F 2 5 B /D SERIES C Q F 2 5 C /D SERIES T h s d ata sheet co n tain s advance in fo rm a tio n and sp e cifica tio n s are su b je ct to change w ith o u t n o tice .

Contextual Info: •I bbSa'IBI 0D245T3 TOb APX N AMER PHILIPS/DISCRETE BCW81 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA

B35R

Abstract: Z6W27V DO-218 do218 Z6W27
Contextual Info: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24

b30r

Abstract: Z5W27V b30r 0d24 marking b30r do-218 do218 1b30r
Contextual Info: SEMICONDUCTOR Z5W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B30R 0D24 No. Item 1 Description Bar N(-) Type B30R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24

BF660

Abstract: marking IAY
Contextual Info: •I tbS3T31 0D24b71 22b H A P X N AMER PHILIPS/DISCRETE BF660 b7E » SILICO N PLANAR T R A N SIST O R P-N-P transistor, in a m icrom iniature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction w ith M O S - F E T s in thick and thin-film circuits.

Contextual Info: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure

e35r

Abstract: Z5W37V do-218 do218
Contextual Info: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24

Z4W27V

Abstract: DO-218 B25R do218 month marking
Contextual Info: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24

transistor day

Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Contextual Info: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month

1A30R

Abstract: MARKING CMR A30R E30A23VR
Contextual Info: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24

do-218

Abstract: H35R Z5W48V do218 diode 218 transistor day
Contextual Info: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24

MARKING CMR

Abstract: Diode MarkING N E30A2CR 0D24
Contextual Info: SEMICONDUCTOR E30A2CR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30R 0D24 E30A2CR Year 0~9 : 2000~2009 D Month

E35A2CS

Abstract: Diode MarkING N
Contextual Info: SEMICONDUCTOR E35A2CS MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35S 0D24 E35A2CS Year 0~9 : 2000~2009 D Month

BF547W

Abstract: BF547
Contextual Info: Philips Semiconductors • bb5 3T 31 0D24b4fl T43 BIAPX Prelimtnary specification N AUER P H I L I P S / D I S C R E T E b?E D NPN 1 GHz wideband transistor D E S C R IP T IO N BF547W PIN N IN G S ilicon N P N transistor in a plastic S O T 3 2 3 S-mini envelope. It is

code marking 6Cp sot-23

Abstract: marking 6ap BC817-40 marking 6CP BC807 BC808 BC817 BC817-16 BC817-25 BC818
Contextual Info: • bbS3T31 0D24M4fc. EDI H A P X N AUER PHIL I P S / D I S C R E T E BC817 BC818 b?E 3> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its.

TC8802

Abstract: TC8802AF parcor Nippon capacitors
Contextual Info: TC8802AF/BF-1 Il 1. m R[]t,724C1 oo24?bs 251 «tosb TOSHIBA UC/UP bl4E D GENERAL The TC8802AF is a single chip PARCOR system voice synthesizing LSI with a 64Kbits mask ROM and a low - pass filter circuit. 2. FEATURES □ PARCOR system 10 kHz sampling voice output.

TMP68661

Contextual Info: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an

18n5o

Abstract: BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor
Contextual Info: AM3894 AM3892 www.ti.com SPRS681A – OCTOBER 2010 – REVISED MARCH 2011 AM389x Sitara ARM Microprocessors MPUs Check for Samples: AM3894, AM3892 1 Device Summary 1.1 Features • High-Performance Sitara ARM Microprocessors (MPUs) – ARM® Cortex™-A8 RISC MPU

Contextual Info: TMS320DM8168, TMS320DM8167 TMS320DM8166, TMS320DM8165 www.ti.com SPRS614 – MARCH 2011 TMS320DM816x DaVinci Digital Media Processors Check for Samples: TMS320DM8168, TMS320DM8167, TMS320DM8166, TMS320DM8165 1 Device Summary 1.1 Features • High-Performance DaVinci Digital Media

USER S MANUAL oki 32 lcd tv

Abstract: USER MANUAL oki 42 lcd tv USER S MANUAL oki 22 lcd tv MSM64155A MSM64P155 QFP100-P-1420-BK USER MANUAL oki 22 lcd tv
Contextual Info: O K I Semiconductor MSM64155A/64155AL Built-in M elody C ircu it and L C D D river 4-Bit M icrocontroller GEN ERAL DESCRIPTION The MSM64155A 1.5 V /64155A L (3.0 V) is a 4-bit microcontroller that incorporates an n X -4/ 20 CPU core. The MSM64155A fam ily offers a built-in 256-nibble data m em ory, 4-Kbyte program