0D120 Search Results

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

LA3805

Abstract: LA3365 LA3860 LA3440 LA3335 LA3460 LA3361 la3401
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP b3E D • 7 tn ? 0 7 b 0D12047 774 ■ TSA J FM MULTIPLEX STEREO DEMODULATOR & Under DevelODment Type No. Package • : jg PoScArnp Suitable Cancel <§> : f t i ! iS lii! HCC M ost Suitable FM*»AM Changeover Non-adjusting

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7 ^ 4 1 4 2 0D12012 STfi «SflGK gj HARRIS HMF-03400 Ku-Ka BAND GaAs FET PRELIMINARY DATA SHEET May 1992 Features • 0.25 Micron Gate Length • Ti/Pt/Au Metallization Enhances Durability and Reliability • Optimized for High Frequency

Contextual Info: HI TA CHI/ O PTOE LECTRONI CS SHE D • 44ibaGS 001207^ bñT « H I T 4 H L 8 3 1 8 E /G GaAIAsLD (-os Description The HL8318E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are

Contextual Info: UN IT R O D E C O R P / U N I T R O D E IC M3E D ^ 3 4 0 5 1 ^ DDlSDMfl □ « U N I IN T E G R A T E D C IR C U IT S LAS 1900 U N ITR O D E 5 AMP POSITIVE VOLTAGE REGULATORS T-5S-//-/3 FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts a 80°C C ase

smd diode code a6I

Abstract: A1s smd TRANSISTOR 4c7 SMD grid tie inverters circuit diagrams ATT3000 grid tie inverter schematics n993 smd transistor A1s ATT3020 ATT3042
Contextual Info: Data Sheet October 1993 -— s u A T « T — M l * Microelectronics ATT3000 Series Field-Programmable Gate Arrays -50, -70, -100, -125, and -150 MHz Features Description • High performance—up to 150 MHz toggle rates The CMOS ATT3000 Series Field-Programmable Gate

Contextual Info: SAMSUNG EL ECT RONICS INC bOE D • 7*^4142 0012GGD 07b MSIIGK -100 m h a f i f u s HMM-11130 -200 X BAND GaAs MMIC POWER AMPLIFIER PRELIMINARY DATA SHEET May 1992 Features • High Output Power Capability for Driver or Power Stage Applications * Tl/Pt/Au Metallization Enhances

Contextual Info: LM-2512 16 x 32 dot matrix display, dual color, 2.0 mm diameter element The LM-2512 is 16 x 32 dot matrix display with 1.6 mm diameter elements. Dim ensions U n its : mm Features • 16 x 32 dot matrix; with round (<|) = 2.0 mm) emitters, external dimensions 39.9 x 79.9 x 6.2 mm

Polyvaricon

Abstract: fm variable capacitor mw-osc SNY-074-2001 HW-6215 IC LA1810 FM stereo MPX Decoder YT-30224 LA4525 T5Y7
Contextual Info: S AN Y O SEMICONDUCTOR r a P ü S Z Î S a ’I C New P ro d u ct t yoe No * Under Developm ent • Package LA1805 LA1806 DIP-24S DIP-24S LA1810 LA1811 DIP-24S DIP-24S LA1816 DIP-24S MFP-24S LA1816M CORP F NC • • MPXj DIP-24S LA1831 ©LA1831M LA1851N

SUN HOLD ras 0910

Abstract: L64845 fbc 337 POLYGON TEC L64852 sun microsystem microprocessor assembly bresenham algorithms L64853A L64853
Contextual Info: LSI LOGIC 5304004 001E01Ô Û01 E l LLC L64845 SGX SBus Graphics Accelerator Technical Manual fé '' •j// M £ J $ á S ' / J A ' & *' .à ' ÿ ^ :V k Jf $ ’ O fi t s 4: 'I F/Ts } ■ £ MS71-000113-99 A \ E3 S304AD4 D D lSO n 74fl E 3 L L C This document is preliminary. As such, it contains data derived from func­

Contextual Info: DALLAS SEMICONDUCTOR DS2180A T1 Transceiver FEATURES PIN ASSIGNMENT • Single chip DS1 rate transceiver • Supports common framing standards - 12 frames/superframe “193S” - 24 frames/superframe “193E” • Three zero suppression modes - B7 stuffing

IC LA1810

Abstract: YT-30103 SNY-074-2001 SNY-074 LA1175 Polyvaricon YT-3019 yt 30196 SNY-074-200 YT-30224
Contextual Info: S AN Y O SEMICONDUCTOR r a P ü S Z Î S a ’I C New P ro d u ct t yoe No * Under Developm ent • Package LA1805 LA1806 DIP-24S DIP-24S LA1810 LA1811 DIP-24S DIP-24S LA1816 DIP-24S MFP-24S LA1816M CORP F NC • • MPXj DIP-24S LA1831 ©LA1831M LA1851N

TW2880

Abstract: TW2864
Contextual Info: Techwell Application Note 1659 TW2880P-BC2-GR Chip Application Note Table of Contents Section 1: Clockgen and PLL . 11

Contextual Info: |_ CXA1597M/P Recording Equalizer Amplifier for Stereo Cassette Decks Description The CXA1597M/P is a bipolar IC developed for recording equalizer amplifier in analog cassette decks. It is suited specifically for double cassette decks. Incorporating the filter circuit greatly reduces

38dec

Abstract: 34P3400
Contextual Info: SSI 34P3400 ¿ ilr n s y s te m 30 Mbit/s Read Channel w/Adaptive Threshold Qualifier s A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel 1C that contains all

Contextual Info: DALLAS D S 2 1 8 2 A Line Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Performs traming and monitoring functions in t [ • Supports Superframe and Extended Superframe formats 16-bit bipolar violation - 8-bit CRC - 8-bit OOF - 8-bit frame bit error cs[

lm 7085

Abstract: ATT3000 ATT3020 ATT3030 ATT3042 ATT3064 ATT3090 XC3000 XC3100 grid tie inverters circuit diagrams
Contextual Info: A TfiT Data Sheet October 1993 A Microelectronics ATT3000 Series High-Performance Field-Programmable Gate Arrays -3, -4, and -5 Features Description • High performance— up to 270 MHz toggle rates The CMOS ATT3000 Series High-Performance FieldProgrammable Gate Array (FPGA) family provides a

LA3805

Abstract: LA3365 LA3821 LA3361 FM multiplex Stereo Demodulator la3335 la3370 UJ12 fm mpx demodulator LA3401
Contextual Info: SANYO SEMICONDUCTOR CORP b3E D 7 ^ 7 0 7 ^ • G012047 774 ITSAJ F M M U L T IP L E X STEREO D E M O D U LA TO R : U n d e r D e v e lo p m e n t Type No. P ackage • p’osc Amp : >8 S uitable P ilo t Car-cei <§> : S S Sfste HOC M o s t S uita ble C han geo ver