0D02T Search Results

Contextual Info: LATTICE SEMICONDUCTOR hflE D Lattice • 0D02T30 û'm ■ LAT GAL26CV12 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax =142.8 MHz — 4.5ns Maximum from Clock Input to Data Output

25 RIA 120 SCR

Abstract: SCR 40 RIA 120 SCR 40 RIA 5 IR 30 RIA 120 SCR SCR 50 RIA 120 25 RIA 60 SCR scr bt 107 AL 2425 dv battery charger 1S697 ft3000m
Contextual Info: POÜJEREX I N C m u ~DË e D F |7 5 T 4 b 2 1 r □□□ET4Û FT300DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 7 J~~ t-25-19 Phase Control SCR

Contextual Info: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

172CQFP

Abstract: A1225 A1225A A1240 A1240A A1280 A1280A actel a1280a unused pin SV50T actel a1240
Contextual Info: ém cM ACT“ 2 Family FPGAs Features • Up to 8000 Gate Array Gates 20,000 PLD equivalent gates Datapath Performance at 105 MHz • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages Two In-Circuit Diagnostic Probe Pins Support Speed

Contextual Info: DALLAS SEMICONDUCTOR CORP DTE D | a t m i B D ODOaflT? L | I f Dallas Semiconductor T1 Transceiver FEATURES • Single chip DS1 rate transceiver • Supports common framing standards -12 frames/superframe “ 193S” •24 frames/superframe “ 193E” • Three zero suppression modes

Contextual Info: SONY CORP/COMPONENT PRODS 4=iE 03023 03 0002^20 2 « S O N Y D SONY. S L D 3 0 1 W T lOOm W High Power Laser Diode r - m Description SLD 301W T is a gain-guided, high-powered laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip

OP07S

Contextual Info: SPT7912 @ SPT 12-BIT, 30 MSPS, ECL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 65 dB SNR @ 1 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input

d9da

Abstract: 8a92 29C82 "Huffman coding" INTEL 8209 LA 7576 29c821 441I
Contextual Info: Tem ic 29C82* MATRA MHS JPEG Decoder Description The 29C82 performs decompression of still pictures in accordance with the ISO JPEG 8 R6 standard for basic systems pixels coded in 8 bits, sequential display, HUFFMAN coding, etc . The 29C82 independently executes most following of the adaptive discrete

Contextual Info: nllifriitr i~~*'TíiniimL—"-^ír niriaittT MICRON TECHNOLOGY INC 3fiE ]> • b l l l S M 6} DQQ5b44 1 « M R N PRELIMINARY TRIPLE PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports

linear hall

Abstract: linear hall effect sensors Ratiometric Linear Hall-Effect Sensor OHN3150U OHN3151U OHN315QU OHS3150U OHS3151U QHS3150U ohs hall effect
Contextual Info: OPTEK Product Bulletin OHN3506/3507 August 1996 Ratiometric Linear Hall Effect Sensor Types OHN315QU, OHN3151U, QHS3150U, OHS3151U Features • A ratiometric linear output capable of sinking and sourcing current • 4.5 V to 6.0 V operation • Responds equally to positive and