08AUG94 Search Results

Contextual Info: 3 4 DRAWING MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. 0 C O P Y R I G H T 19 RELEASED FOR P UB LICATIO N BY ANP I NCORRORATED . A L L I N T E R N A T I O N A L 2 <3> , 19 LOC G RIGHTS RESERVED. DI 5T 14 R EV I 5 I ON! ZONE

TP2020L

Abstract: bss92 VP2020L TP1220L
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

E13288

Abstract: LR7189 MIL-T-10727 MIL-T-7928
Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. LOC ,1 9 ALL INTERNATIONAL RIGHTS RESERVED. 6 DIST REVISIO N S 14 P F ZONE LTR DESCRIPTION DATE E REVISED 8 REDRAWN PER 0720-0055-94

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

Siliconix JFET Dual

Abstract: SST404 JFET u401 Siliconix Dual JFETs Siliconix JFET Duals Siliconix JFETs Dual Siliconix N-Channel JFET "N-Channel JFET" 2N5911 Dual N-Channel JFET
Contextual Info: SST/U401 Series Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) U401 –0.5 to –2.5 –40 1 –2 5 SST/U404 –0.5 to –2.5 –40 1

VN0808M

Abstract: VQ1006P VN0808L
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)

8L820

Abstract: ltzl
Contextual Info: SEPTEMBER 13, 1994 TEST REPORT #94340 QUALIFICATION TESTING CLP SERIES CONNECTOR SAMTEC CORPORATION APPROVED BY: THOMAS PEEL DIRECTOR OF TEST PROGRAM DEVELOPMENT CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was

2N6659

Abstract: 2N6660 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660

TO-237

Abstract: VN0606L VN66AFD VN0606M TN0601L
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP LOC ,19 INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. 6 DIST REVISIONS 14 P F ZONE LTR DESCRIPTION DATE D REVISED 8 REDRAWN PER 0720-0055-94

Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION T H I S DRAWING IS UNPUBLISHED. C COPYRIGHT 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC ,19 DIST 14 6 ALL INTERNATIONAL RIGHTS RESERVED. REVISIO NS P F ZONE LTR DESCRIPTION DATE B REVISED 8 REDRAWN PER 0720-0055-94

2N6659

Abstract: 2N6660 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660

equivalent of BS170

Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P

VN0808M

Abstract: VN0808L VQ1006P
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)

tr-611

Contextual Info: q4340 This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation of New Albany, IN, who was the test sponsor. All equipment and measuring instruments used during testing were

MOSFET 2n6659

Abstract: 2N6660 SILICONIX
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS 2N6659 Min (V) 2N 6660 60 VQiOOU/P Max (Q) V GS(th) (V ) Id (A) 1.8 @ V Gs = 10 V 0.8 to 2 1.4 3 @ V GS= 10 V 0.8 to 2 1.1 3.5 @ V GS= 10 V 0.8 to 2.5

0808L

Abstract: VN0808M TO-226A to-237
Contextual Info: Tem ic VN0808L/M, VQ1006P S e m i c o n d u c to r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS M i n (V ) rDS(on) M a x ( Q ) V GS (th )(V ) 4 @ VG S = 10 V 0.8 to 2 0.3 4 @ V c s - 10 V 0.8 to 2 0.33 4 @ V q S = 10 V

539J

Abstract: E13288 LR7189 MIL-T-10727 330301
Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 AMP BY INCORPORATED. LOC ,19 G ALL INTERNATIONAL RIGHTS RESERVED. 13.43 R [. 531 J MAX WASHER D DIST 14 P F ZONE LTR DESCRIPTION C REVISED

VN0300M

Abstract: TN0201L TN0401L VN0300L
Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660