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Infineon Technologies AG


Infineon Technologies AG IPP085N06LG Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IPP085N06LG		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP085N06LGAKSA1 Power Field-Effect Transistor, 80A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPP085N06LGAKSA1		15,000		1	1 - 10 - 100 $0.91 1000 $0.76 10000 $0.68	Buy Now
Infineon Technologies AG IPB085N06LG Power Field-Effect Transistor, 80A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB085N06LG		5,613			1 - 10 - 100 - 1000 - 10000 -	Get Quote

085N06L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking D53 Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.5 mΩ 80 A • 175 °C operating temperature	Original	ipb085n06l ipp085n06l p-to263-3-2 085n06l +2p-to220-3-1 marking d53	PDF
085N06L Abstract: IPB085N06L IPB085N06L G PG-TO220-3 smd marking g23 Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature	Original	ipb085n06l ipp085n06l p-to263-3-2 p-to220-3-1 +4085n06l ipb085n06l g pg-to220-3 smd marking g23	PDF
085N06L Abstract: IPB085N06L smd marking g23 PG-TO220-3 marking g23 SMD Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 8.2 m: 80 A • 175 °C operating temperature	Original	ipb085n06l ipp085n06l pg-to263-3 p-to262 +4pg-to220-3 085n06l smd marking g23 marking g23 smd	PDF
SMD MARKING D80 Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature	Original	ipb085n06l ipp085n06l p-to263-3-2 085n06l +2p-to220-3-1 smd marking d80	PDF
IEC61249-2-21 Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature	Original	ipb085n06l ipp085n06l iec61249-2-21 p-to263-3-2 +3p-to220-3-1 085n06l pg-to220-3	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF