08/TBA 2800 Search Results

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.

bussmann semiconductor fuse catalogue

Abstract: bs1362 BUSSMANN SFT Series HKP-HH fuses T2A 250V C520 A/D 1.5A, 125V, 32mm glass fuse IEC-127-4 HTC220M FUSE 3A 125V SMT
Contextual Info: Bussmann Table of Contents Fuse Holder Selection Chart 2 Surface Mount Fuses 3 Axial and Radial Leaded Fuses 8 5 x 15mm Fuses 12 5 x 20mm Fuses 18 6.3 x 32mm Fuses 36 Automotive Fuses 46 Miscellaneous Fuses 47 Fuse Clips for 5mm dia. Fuses 51 Fuse Clips for 6.3mm dia. Fuses

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

AT52BR3244

Abstract: AT52BR3244T AT52BR3248 AT52BR3248T SA70
Contextual Info: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • •

VOGT p8

Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und

Contextual Info: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50112-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 16) FLASH MEMORY & o n i i /v, n nil 2 M (x 16) STATIC RAM o t a t i p a MB84VA2108-10/MB84VA2109 -10 • FEATURES • Power supply voltage of 2.7 to 3.6 V

equivalent sd 4841

Abstract: FFA70 K C2800 Y GR-253-CORE* K1 K C2800 Y pin configuration transistor c2800 GR253-CORE PM5347 APS software TBA 2800
Contextual Info: PM5347 S/UNI-PLUS PRELIMINARY REFERENCE DESIGN PMC- 971116 ISSUE 2 APS SOFTWARE REFERENCE DESIGN PM5347 AUTOMATIC PROTECTION SWITCHING APS SOFTWARE REFERENCE DESIGN PRELIMINARY ISSUE 2:FEBUARY 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION

A0-A21

Contextual Info: ISSI IS71VPCF64GS08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: FLASH FEATURES • Power Dissipation:

IRT 1250

Abstract: irt 1260 Zener diode ZTK 2066 TVPO KEYBOARD CONTROLLER 8049 TVPO-2066 TVPO2066 8049 Keyboard Controller SAA 1260 CI 3060 elsys
Contextual Info: TVPO 2066 TV Controller with On-Screen Display for TV Receivers Edition August 24, 1992 6251-327-3E ITT Semiconductors TVPO 2066 Contents Page Section Title 3 1. Introduction 3 3 4 4 4 5 5 5 5 5 5 5 6 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.9.1.

SAMSUNG NOR Flash

Contextual Info: NOR FLASH MEMORY K8S6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung nor flash

Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Contextual Info: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA260

Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Contextual Info: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

BA204

Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Contextual Info: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

06SEC

Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

66c4

Contextual Info: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •

AT52BR3224

Abstract: AT52BR3244 AT52BR3244T AT52BR3248 AT52BR3248T
Contextual Info: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •

Contextual Info: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features

Contextual Info: IC71V16F64IS08 Document Title Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (512 K x 16-Bit) Pseudo SRAM Revision History Revision No. 0A History