06035J Search Results

TQP7M9104

Abstract: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603
Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

C4493

Contextual Info: Advance Product Information Sept. 1, 2004 5.6 Watt 3.5GHz Packaged HPA TGA2925-EPU-SD Key Features TGA2925 • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 37.5 dBm Nominal Psat Internally Partially Matched IMD3 -50 dBc @ 24 dBm SCL, Typical

ofdm transceiver 900mhz

Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3

Contextual Info: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package General Description GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 16 4 15 13 GND/NC RFout/Vcc

7M9106

Abstract: TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10
Contextual Info: TQP7M9106 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 GND/NC 5 14 6 13 General Description Pin Configuration

6 ghz amplifier 10w

Contextual Info: Advance Product Information October 31, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

MMG3006N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,

Contextual Info: Advance Product Information October 31, 2008 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched

Contextual Info: AH215 1 Watt, High Linearity InGaP HBT Amplifier Applications •  Final stage amplifiers for Repeaters Mobile Infrastructure SOIC-8 SMT Package Product Features  400 – 2300 MHz  18 dB Gain @ 900 MHz  +31.5 dBm P1dB  +46 dBm Output IP3 

K 1358 fet transistor

Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

FR408

Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

ML200C

Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
Contextual Info: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

Q62702-G82

Abstract: w 3425 nf MW-16 rAised cosine
Contextual Info: GaAs MMIC CGY 353 Data Sheet • • • • • 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions!

PCB Rogers RO4003

Abstract: TGA2925-SG RO4003
Contextual Info: Advance Product Information Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched

Amplifier SOT-89 c4

Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

PCB Rogers RO4003 substrate datasheet

Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
Contextual Info: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

murata COG capacitor

Abstract: INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING
Contextual Info: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs