05SEP08 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 4 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - ,- LOC ALL RIGHTS RESERVED. 4^ DIST ed UP R E V IS IO N S 0 0 P LTR DESCRIPTION F 180° O U T S ID E R E VIS E D P ER DATE DWN 05SEP08 EC0-08-007327

Contextual Info: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2005 3 RELEASED FOR A LL PU B LIC ATIO N RIG HTS 2 - ,- R E V IS IO N S R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR B R E V IS E D PER D E S C R IP TIO N DATE DWN ECO -08-007327 05SEP08 APVD

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . 2 - ,- LOC A LL R IG H T S R E S E R V E D . R EVISIO N S D IS T 00 D E S C R IP T IO N AL REVISED PER ECO - 05SEP08

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S GP 00 LTR DESCRIPTION C DATE DWN BM WM 05SEP08 REVISED PER E C Q - 08-007327 APVD 1 -THE CONTACT SURFACES OF THE TERMINALS ARE

Contextual Info: 4 THIS 3 DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 2 - ,- REVISIONS ALL RIGHTS RESERVED. 180° O U T S ID E P S H IE L D LTR J 1 . DESCRIPTION R E VIS E D P ER DATE DWN 05SEP08 EC0-08-007327 APVD BM WM THIS KIT SHIPPED NOT ASSEMBLED.

Contextual Info: 4 3 2 LOC 180° OUTSIDE D IS T R E V IS IO N S 00 SHIELD D E S C R IP T IO N E 1 . THIS R E VIS E D KIT SHIPPED P ER -007327 ECO- 05SEP08 BÏ NOT ASSEMBLED. D ^ MATERIAL: SHIELDS - BRIGHT NICKEL PLATED CARBON STEEL. PLUG HOUSING - POLYPHENYLENE OXIDE, UL94V1 RATED, BLACK.

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL COPYRIGHT - RIG HTS LOC D IS T R E V IS IO N S GP 00 R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. LTR D E S C R IP T IO N C 1 .T H E CONTACT SURFACES COATED WITH DATE DWN BM WM 05SEP08 REVISED PER E C Q - 08-007327

Contextual Info: 4 T H IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO 2 3 ELECTRONICS P U B LIC A T IO N R IG H TS - , - LOC D IST RESERVED. REVISIONS 00 CORPORATION. D E S C R IP T IO N E RECEPTACLE D PER ECO- 05SEP08 -007327 APVD BÏ

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

DIN 7967

Abstract: TEST2600 TSSS2600
Contextual Info: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with

BF998RAW-GS08

Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

Contextual Info: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

IRFP250

Abstract: MURB2020CT MURB2020CT-1
Contextual Info: MURB2020CTPbF/MURB2020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 10 A FRED PtTM FEATURES MURB2020CT-1PbF MURB2020CTPbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

IRFP250

Abstract: MURB1520 MURB1520-1
Contextual Info: MURB1520PbF/MURB1520-1PbF Vishay High Power Products Ultrafast Rectifier, 15 A FRED PtTM FEATURES MURB1520-1PbF MURB1520PbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

BPW85

Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
Contextual Info: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

TSUS4400

Abstract: 6544
Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18°

TSAL6100

Abstract: high power infrared led
Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED. D IS T R E V IS IO N S 00 C O R P O R A T IO N . D E S C R IP T IO N R E VIS E D •CAPTIVE P A N H E A D

ET6052

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1T C O E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - RESERVED. GP C O R P O R A T IO N . R E V IS IO N S 00 D E S C R IP T IO N R E VIS E D BLUE COLOR DOT

Contextual Info: 8TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 8 A FEATURES • • • • • • • • • • Base cathode 2 TO-220AC 1 Cathode 3 Anode 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage

BPV11

Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T C O R P O R A T IO N . •CAPTIVE P A N H E A D 19 .05[.75] LONG ■4-40 X D E S C R IP T IO N

Contextual Info: TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power

BPW96

Abstract: BPW96B BPW96C
Contextual Info: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation