BPW96C Search Results

Contextual Info: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW96

Abstract: BPW96B BPW96C
Contextual Info: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW96

Abstract: BPW96C Infrared emitter 450 nm 8239 BPW96B
Contextual Info: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

L-53P3BT

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BPW85C

Contextual Info: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package

Contextual Info: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.

TSSP4038

Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.

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Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

BPW96

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

Contextual Info: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

BPW96

Abstract: BPW96A BPW96B BPW96C
Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared

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Abstract: bpv10nf TEMD2100
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package

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Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Contextual Info: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

bpw 104

Abstract: BPW96 BPW96A BPW96B BPW96C
Contextual Info: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.

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Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

Contextual Info: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.

Contextual Info: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.