05055 Search Results

Contextual Info: ALLEN AVIONICS INC ALLEN A V IO N ICS, INC. 54E D • 0505536 0 0 0 0 ^ 0 S'ÎE ■ .' V ' Li ' \ ~ \ 3 14ST ACTIVE DELAY LINES 16ST 5 TAPS SURFACE MOUNT FEATURES Stable Precise Delay Fast Rise Times Small-Outline Packages Compatible with Pick and Place Equipment

Contextual Info: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505567812 Active Ring Tongue Terminal for 6 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/4" M6 , Oxygen-Free Copper, Width 10.00mm (.394"), Length 29.50mm (1.161")

Contextual Info: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557912 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/2" M12 , Oxygen-Free Copper, Length 34.00mm (1.339")

A2YR

Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 C-15 embient mounting data 17ec Z1103
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS d È T | m ù S54S2 55C INTERNATIONAL RECTIFIER ODOSOSS 05055 D Data Sheet No. PD-2.047B INTERNATIONAL RECTIFIER l - 0 3 I « R - / " 7 SOSQ SERIES 8 Amp Schottky Power Rectifiers Description/Features Major Ratings and Characteristics

Contextual Info: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557012 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 10 M5 , Oxygen-Free Copper, Width 12.00mm (.472"), Length 23.50mm (.925")

Contextual Info: INTERNATIONAL RECTIFIER <*855452 SS INTERNATIONAL d ËT| MÛ554S2 ODOSOSS R EC TIFIER 55C 05055 D Data Sheet No. PD-2.047B INTERNATIONAL R E C T IF IE R I R / - 3 - / “ 7 SOSO SERIES 8 Am p Schottky Power Rectifiers Description/Features Major Ratings and Characteristics

Contextual Info: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557212 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 5/16" M8 , Oxygen-Free Copper, Length 29.50mm (1.161")

Contextual Info: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505567112 Active Ring Tongue Terminal for 6 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/4" M6 , Oxygen-Free Copper, Width 12.00mm (.472"), Length 29.50mm (1.161")

Contextual Info: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT10086BVFR

Contextual Info: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT30M70BVR

Contextual Info: APT30M70BVR 48A 0.070Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

319345S12

Abstract: 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S
Contextual Info: Model Number Frequency Tuning Tuning VCC ICC Voltage Sensitivity MHz 001001SMC5TM 10-10 MHz Output 2ND Noise Power c 10 KHz (VDC) (MHz/v) (VDC) (mA) (dBm) (dBc) (dBc) 1-3.5 3 5 25 -10 -110 004004SM5 42-46 MHz 0.5-4.5 3 5 8 -3±1 -13 -118 006009SMI12 60-90MHz

DIODE 248

Contextual Info: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5010LVR

Abstract: apt5010l
Contextual Info: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT8056BVFR

Contextual Info: APT8056BVFR 16A 0.560Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®