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    APT5010LVR Search Results

    APT5010LVR Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT5010LVR
    Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF 66.14KB 4
    APT5010LVRG
    Microchip Technology MOSFET N-CH 500V 47A TO264 Original PDF 65.94KB
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    APT5010LVR Price and Stock

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    Microchip Technology Inc APT5010LVRG

    Trans MOSFET N-CH 500V 47A 3-Pin(3+Tab) TO-264 Tube
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    Verical APT5010LVRG 60 5
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    Avnet Americas APT5010LVRG Tube 30
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    Mouser Electronics APT5010LVRG
    • 1 $18.45
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    • 100 $15.93
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    Newark APT5010LVRG Bulk 250
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    Microchip Technology Inc APT5010LVRG Tube 20 Weeks
    • 1 $18.45
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    Onlinecomponents.com APT5010LVRG 1
    • 1 $15.33
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    Avnet Silica APT5010LVRG 22 Weeks 1
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    Master Electronics APT5010LVRG 1
    • 1 $15.33
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    Vyrian APT5010LVRG 1,000
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    Microsemi Corporation APT5010LVR

    TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,47A I(D),TO-264AA
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    Quest Components APT5010LVR 8
    • 1 $14.71
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    APT5010LVR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT5010LVR

    Abstract: apt5010l
    Contextual Info: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    apt5010lvro-264apt5010l PDF

    APT5010LVR

    Contextual Info: APT5010LVR A dvanced P o w er Te c h n o l o g y P O W E R M O 500 ' S 47 V 0 100 2 A . Í V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    apt5010lvro-264mil-std-750o-264aa PDF

    CCO-40

    Abstract: APT5010LVR 250DS
    Contextual Info: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    apt501olvro-264apt5010lvrcco-40+1250ds PDF

    3.5kw pfc

    Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
    Contextual Info: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:


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    f-24300nh03054d-90471uc1854/uc2854/uc3854+12pp171-177d-90471n3.5kw pfcuc3854 for pfc 3.5kw2kw uc3854smps with uc28545010b2vrpower factor correction with the uc3854unitrode claudio de sa e silvauc3854 applicationpfc 1.5kw3kw smps pfc PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    mil-prf-19500iso9001apt10026jnapt1004rbn+8apt10050jnfredfetsapt8030jnapt4020bnapt5010lvfrapt5014lvrarf444apt10m09lvr PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    mil-prf-19500iso90015017bvr40814+85020bn1431 tapt5010lvrapt1001rblcapt10050apt30m85bvrapt5020blcapt2x101d60 PDF

    uc3854 3kw pfc

    Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
    Contextual Info: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager


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    apt9901b-1330uc3854 3kw pfcuc3854 application note+7power factor correction with the uc38542kw pfcuc3854 3kwpfc 3kwunitrode claudio de sa e silva3.5kw pfc3kw uc3854 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    mil-prf-19500iso9001apt6015lvr5020bn+8apt6011lvfrarf4505017bvrapt2*61d120jfredfetsapt8015jvrapt100gf60lrapt5014lvr PDF

    uc3854 3kw pfc

    Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
    Contextual Info: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA


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    apt9901b-1330uc3854nh03054+14d-90471uc1854/uc2854/uc3854pp171-177d90471nuc3854 3kw pfcunitrode claudio de sa e silvapfc 3kwpower factor correction with the uc38542kw pfcsc265 triac2kw uc38543kw uc3854uc3854 for pfc 3.5kw3.5kw pfc PDF

    APT5010LVR

    Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
    Contextual Info: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology


    Original
    apt9902b-1330o-264apt5010lvr+7to264 footprintapt5010b2vr072kbarco094ksil-pad to-247orcus PDF

    Contextual Info: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    apt501olvro-264apt5010lvr5r182 PDF

    APT0103

    Abstract: APT9302 APT5010LVR AN-944 APT50M75LL MOSFET IGBT THEORY AND APPLICATIONS Powercon
    Contextual Info: Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 Power MOSFETs and IGBTs have established themselves as premier power semiconductors in


    Original
    an-944apt0103apt9302apt5010lvr+3apt50m75llmosfet igbt theory and applicationspowercon PDF