APT40M70LVR Search Results
APT40M70LVR Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT40M70LVR | Advanced Power Technology | POWER MOS V 400V 57A 0.070 Ohm | Original | 63.8KB | 4 |
APT40M70LVR Price and Stock
Microchip Technology Inc APT40M70LVRGTransistor MOSFET N-Channel 400V 57A 3-Pin TO-264 - Rail/Tube (Alt: APT40M70LVRG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT40M70LVRG | Tube | 30 |
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APT40M70LVRG | Bulk | 250 |
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APT40M70LVRG | Tube | 237 | 20 Weeks |
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APT40M70LVRG |
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APT40M70LVRG | 21 Weeks | 1 |
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APT40M70LVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt40m70lvro-264 | |
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Contextual Info: APT40M70LVR 57A 0.070Ω 400V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. |
Original |
apt40m70lvro-264 | |
LG 57AContextual Info: APT40M70LVR • R A dvanced W .\A p o w e r Te c h n o lo g y " 400v 57 a 0 .070q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
apt40m70lvro-264lg 57a | |
LG 57AContextual Info: A dvanced P o w er Te c h n o l o g y APT40M70LVR 400V 57A 0.070« ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
apt40m70lvro-264mil-std-750o-264aa+1 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 |