04JAN200 Search Results

intel 80196 microcontroller

Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Contextual Info: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST REVI S IONS FT LTR DI HOUSI NG, OTY: I MATERIAL: THERMOPLASTIC, \ MAY BE COLOR-SEE DESCRIPTION DATE DWN REVISED

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

JESD97

Abstract: L100NH3LL STL100NH3LL
Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)

SD2942

Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Contextual Info: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

GW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction

Contextual Info: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

L80N4LL

Contextual Info: STL80N4LL N-CHANNEL 40V - 0.0046Ω - 80A PowerFLAT 6x5 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE STL80N4LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 40 V < 0.005 Ω 20 A (2) TYPICAL RDS(on) = 0.0046 Ω @ 10V

VIPer Design Software

Abstract: ST VIPER 22 ST VIPER 17 BE-16-118CPH be16-118cph EE16-Z PC30 from TDK AN1074 viper flyback transformer VIPER50 application note
Contextual Info: AN1074 Application note Solution proposal for auxiliary power supply using VIPer20-E Introduction The present board prototype is a 120 to 375 VDC input off-line single switch flyback, working at 100 kHz. It is based on a new off-line smart switcher: the VIPer20-E.

Contextual Info: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

FillFactory

Abstract: 14M CMOS Image Sensor IBIS4-14000 CYII4SC014KAA-GAC CYII4SM014KAA-GBC IBIS414000 IBIS4-14000-C IBIS4-14000-M FillFactory 14000 monochrome cmos IMAGE SENSOR 2005
Contextual Info: IBIS4-14000 Datasheet IBIS4-14000 14 M Pixel Rolling shutter CMOS image sensor Datasheet Cypress Semiconductor Corporation 3901 North First Street San Jose, CA 95134 408-943-2600 Contact info@Fillfactory.com Document #:38-05709 Rev.* Revision 1.2 Page 1 of 36

LVDS to MIPI DSI

Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

FBGA63

Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

6414a

Abstract: st10 Bootstrap AN23 LQFP144 PQFP144 ST10 ST10F272E ST10F272M 3170B
Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator – Enhanced boolean bit manipulations

VIPer20A-E

Abstract: EE16 transformer working AN1246 pico fuse Cramer Coil CSM cramer transformers J2/Cramer coil CS11 H11A817A RS10
Contextual Info: AN1246 Application note VIPower: auxiliary BIAS power supply using VIPer20A-E Introduction This application note describes a bias power supply to meet the needs of powering up Power MOSFETs as well as providing standby power when the main unit is off. The VIPer20ADIP-E, a part of STMicroelectronics proprietary VIPower Vertical Intelligent

sd2943

Abstract: 200B 700B M177 SD2933
Contextual Info: SD2943 RF Power Transistor HF/VHF/UHF N - Channel MOSFETs General Features • HIGH POWER CAPABILITY ■ POUT = 350W MIN. WITH 22dB GAIN @ 30 MHz ■ PSAT = 450 W ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES ■ GOLD METALLIZATION

JESD97

Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Contextual Info: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS

6206a

Abstract: stmicroelectronics "serial eeprom" st10 Bootstrap ST10F272MR
Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •

STL65N3LLH5

Contextual Info: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)