04JAN2007 Search Results
04JAN2007 Datasheets Context Search
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Contextual Info: THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST REVI S IONS FT LTR DI HOUSI NG, OTY: I MATERIAL: THERMOPLASTIC, \ MAY BE COLOR-SEE DESCRIPTION DATE DWN REVISED |
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o-06-01315207jun200604jan200724aug2001+3 | |
JESD97
Abstract: L100NH3LL STL100NH3LL
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stl100nh3lljesd97l100nh3ll | |
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Contextual Info: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances |
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stw9n150o-247 | |
LVDS to MIPI DSI
Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
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ot-666lvds to mipi dsimipi dsi to lvdsmipi dsi lcd controller+7 | |
STL65N3LLH5Contextual Info: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) |
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stl65n3llh5 | |
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Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories |
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ot-666 | |
zener B51
Abstract: Zener diode A01
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dse-451-00904-jan-2007zener b51zener diode a01 | |
9N150
Abstract: STW9N150 8A720 JESD97 9n15
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stw9n150o-2479n1508a720+2 | |
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Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.4mm Height 19-217/T7D-CS2T2B2/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow |
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19-217/t7d-cs2t2b2/3tszdse-197-t1904-jan-2007 | |
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Contextual Info: STL65N3LLH5 N-channel 30 V - 0.006 Ω - 17 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0075 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark |
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stl65n3llh5 | |
dsilc6-4xx
Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
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ot-666dsilc6-4xxkv 21 fs 1404f2 diode+2 | |
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Contextual Info: STL65N3LLH5 N-channel 30 V - 0.0048 Ω - 19 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) |
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stl65n3llh5 | |
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Contextual Info: STL100NH3LL N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type RDS(on) max ID <0.0035 Ω 25A (1) VDSS ) s ( t c u d o ) r s ( P t c e t u e d l o o r Application s P b e O t e l ) Description o s ( s t b c u |
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stl100nh3ll | |
JESD97
Abstract: L100NH3LL STL100NH3LL PowerFLAT
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stl100nh3lljesd97l100nh3llpowerflat | |
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JESD97
Abstract: L100NH3LL STL100NH3LL
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stl100nh3lljesd97l100nh3ll | |
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Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type VDSS RDS(on) (max) ID STL100NH3LL 30 V <0.0035 Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) |
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stl100nh3ll | |