04AUG09 Search Results

31-5900

Contextual Info: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - ZINC DIECAST, NICKEL PLATING CONTACT - BRASS, GOLD PLATING INSULATOR - PTFE & T.P.X, NATURAL & WHITE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:

Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)

234B

Contextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V

1N4007

Abstract: 1N4001 1N4002 1N4003 1N4004
Contextual Info: 1N4001 thru 1N4007 Axial Lead General Purpose Plastic Rectifier P b Lead Pb -Free Features: * The plastic package carries UnderWriters Laboratory Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage

AXP 188

Abstract: AXP 209 AXP 189 btp 128 550 TPSMP24A TPSMP33A btp 129 btp 128 BSP 324 tpsmp9.1a
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Uni-direction only

DO-204AL

Abstract: J-STD-002 SB1H100 SB1H90
Contextual Info: New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency

Contextual Info: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC

Contextual Info: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)

Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V

Contextual Info: New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency

Contextual Info: W Vishay Dale NTC Thermistors, Surface Mount Chip FEATURES • • • • Top and bottom surface terminations High-density monolithic ceramic construction Allows design flexibility for use with hyprid circuitry Model W is a thermistor die with silver conductors fired on

Contextual Info: T H I S D R A W I NG I S U N P U B L I S H E D . C O P Y R I G HT 2009 R E L E A S E D RO R P U B L I C A T I ON BY TYCO ELECTRONICS CORPORATION ALL R IG HTS LOC R E V I S I ONS D I ST RESERVED. D E S C R I P T ION BA N E W R EL E AS E 04-AUG-09 T E R M I N A L W R A P A R O U N D A P P R O X 0 . 0 0 7 " 0 . 1 8 m m BOTH E NDS

TFDU6300

Abstract: TFDU6300-TR3 TFDU6300-TT3 TFDU6301
Contextual Info: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV

Contextual Info: New Product SiZ704DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0240 at VGS = 10 V 0.0300 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.0170 at VGS = 4.5 V 12a 12a 16a 16a Qg (Typ.)

Contextual Info: New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency

J-STD-002

Abstract: SB3H100 SB3H90 jesd
Contextual Info: New Product SB3H90, SB3H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop

EGP10G

Abstract: DO-204AL EGP10A J-STD-002 EGP10B
Contextual Info: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency

Contextual Info: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V

DO-204AC

Abstract: J-STD-002 SB2H100 SB2H90
Contextual Info: New Product SB2H90, SB2H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: New Product SiZ702DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) () ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV

Contextual Info: SiZ720DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0087 at VGS = 10 V 16a 0.0115 at VGS = 4.5 V 16a 0.0062 at VGS = 10 V 16a 0.0080 at VGS = 4.5 V 16a Qg (Typ.) 7.3 nC 21 nC