JESD Search Results

Contextual Info: SN74AHC1G32 SINGLE 2-INPUT POSITIVE-OR GATE SCLS317G – MARCH 1996 – REVISED NOVEMBER 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Process Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 Package Options Include Plastic

Contextual Info: SN74ALVCH16835 18-BIT UNIVERSAL BUS DRIVER WITH 3-STATE OUTPUTS SCES053F – SEPTEMBER 1995 – REVISED OCTOBER 2000 D D D D Member of Texas Instruments’ Widebus  Family Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model A114-A

Contextual Info: SN54AHCT245, SN74AHCT245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCLS233G – OCTOBER 1995 – REVISED OCTOBER 1998 D D D Inputs Are TTL-Voltage Compatible EPIC  Enhanced-Performance Implanted CMOS Process Latch-Up Performance Exceeds 250 mA Per JESD 17

Contextual Info: SN54AHC574, SN74AHC574 OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCLS244F – OCTOBER 1995 – REVISED NOVEMBER 1999 D D 3-State Outputs Drive Bus Lines Directly Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per

Contextual Info: SN74HSTL16918 9-BIT TO 18-BIT HSTL-TO-LVTTL MEMORY ADDRESS LATCH SCES096C – APRIL 1997 – REVISED JANUARY 1999 D D D D D DGG PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family Inputs Meet JEDEC HSTL Std JESD 8-6 and Outputs Meet Level III Specifications

Contextual Info: SN54AHCT08, SN74AHCT08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SCLS237H – OCTOBER 1995 – REVISED NOVEMBER 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Process Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17

Contextual Info: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234G – OCTOBER 1995 – REVISED NOVEMBER 1999 D D D D D EPIC  Enhanced-Performance Implanted CMOS Process Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per

Contextual Info: SN74AHC1G14 SINGLE SCHMITT-TRIGGER INVERTER GATE SCLS321G – MARCH 1996 – REVISED NOVEMBER 1999 D D D D D EPIC  Enhanced-Performance Implanted CMOS Process Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per

Contextual Info: SN74AHC04 SN54AHC04 www.ti.com SCLS231N – OCTOBER 1995 – REVISED MAY 2013 HEX INVERTERS Check for Samples: SN74AHC04, SN54AHC04 FEATURES 1 Operating Range 2-V to 5.5-V Latch-Up Performance Exceeds 250 mA Per JESD 17 SN54AHC04 . . . JORWP ACKAGE SN74AHC04 . . . D,DB,DGV,N,NS,

Contextual Info: SN74LV573AT OCTAL TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS www.ti.com SCES574C – JUNE 2004 – REVISED AUGUST 2005 FEATURES • • Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22

BY252P

Contextual Info: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

VS-40EPS12-M3

Abstract: VS-40EPS08-M3 VS-40EPS12
Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47

Contextual Info: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS

VSB3200

Abstract: vsb320
Contextual Info: New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

Contextual Info: SN74AHC1G02 SINGLE 2ĆINPUT POSITIVEĆNOR GATE SCLS342L − APRIL 1996 − REVISED JUNE 2005 D D D D D D ESD Protection Exceeds JESD 22 Operating Range of 2 V to 5.5 V Max tpd of 6.5 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

Contextual Info: SN54AHCT373, SN74AHCT373 OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCLS239M – OCTOBER 1995 – REVISED JULY 2003 D Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model A114-A

Contextual Info: SN54AHC32, SN74AHC32 QUADRUPLE 2-INPUT POSITIVE-OR GATES SCLS247H – OCTOBER 1995 – REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 13 3 12 4 11 5 10 6 9 7 8 1B 1Y 2A 2B 2Y 1 14 1B 1A NC VCC 4B VCC VCC

Contextual Info: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234K – OCTOBER 1995 – REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 13 3 12 4 11 5 10 6 9 7 8 1Y 2A 2Y 3A 3Y 14 1Y 1A NC VCC 6A 1 SN54AHCU04 . . . FK PACKAGE

Contextual Info: Silicon Technology Reliability www.vishay.com Vishay Siliconix N-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size 18 368 Equivalent Device Hours 2 954 669 261 Failure Rate in FIT 2.505 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,

60EPS08PBF

Abstract: VS-60EPS12PBF
Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47

LWT67

Contextual Info: VLMW33. Vishay Semiconductors Power SMD LED PLCC-2 FEATURES • High efficient InGaN technology • Chromaticity coordinate categorized acc. to CIE1931 per packing unit • Typical color temperature 5500 K • ESD-withstand voltage: up to 1 kV according to JESD22-A114-B

Contextual Info: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mountable Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 qualified according

1N54

Abstract: 1N5402 DIODES
Contextual Info: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in