WTC2312 Search Results
WTC2312 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V |
Original |
wtc2312ot-2304-aug-09 | |
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Contextual Info: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<31mΩ @VGS=4.5V RDS(ON)<37mΩ @VGS=2.5V RDS(ON)<47mΩ @VGS=1.8V |
Original |
wtc2312sc-5906-nov-0726-nov-08 | |
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Contextual Info: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V |
Original |
wtc2312ot-2304-aug-09 |