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Infineon Technologies AG


Infineon Technologies AG IPB03N03LBG OptlMOS N-Channel Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPB03N03LBG		1,000		1	1 - 10 - 100 $1.30 1000 $1.08 10000 $0.96	Buy Now
Vyrian	IPB03N03LBG		9,060			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP03N03LBG Power Field-Effect Transistor, 80A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPP03N03LBG		8,735			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB03N03LB Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB03N03LB		6,064			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPD03N03LBG Power Field-Effect Transistor, 90A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPD03N03LBG		5,861			1 - 10 - 100 - 1000 - 10000 -	Get Quote

03N03LB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IPP03N03LB Abstract: JESD22 Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp03n03lb pg-to220-3-1 03n03lb jesd22	PDF
03N03LB Abstract: MARKING d45 Contextual Info: OptiMOS 2 Power-Transistor 03N03LB G 03N03LB G 03N03LB G 03N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level	Original	ipd03n03lb ipu03n03lb ips03n03lb ipf03n03lb +4pg-to252-3-11 q67042-s4260 03n03lb marking d45	PDF
03N03LB Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp03n03lb pg-to220-3-1 03n03lb	PDF
IPB03N03LB Abstract: JESD22 03N03LB Contextual Info: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb03n03lb pg-to263-3 pg-to220-3-1 p-to263-3 +203n03lb jesd22	PDF
IPP03N03LB Abstract: JESD22 C3320 Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp03n03lb pg-to220-3-1 03n03lb jesd22 +1c3320	PDF
Contextual Info: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd03n03lb ips03n03lb pg-to252-3-11 pg-to251-3-11 +103n03lb	PDF
Q67045-A5078 Abstract: 03N03LB Contextual Info: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb03n03lb p-to263-3 pg-to220-3-1 q67045-a5078 +103n03lb	PDF
03N03LB Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp03n03lb pg-to220-3-1 q67045-a5077 03n03lb	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
IPD03N03LB Abstract: JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4260 Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd03n03lb pg-to252-3-11 p-to252-3-11 q67042-s4260 +203n03lb jesd22	PDF
03N03LB Abstract: IPD03N03LB JESD22 PG-TO252-3-11 03n03l Contextual Info: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd03n03lb ips03n03lb pg-to252-3-11 pg-to251-3-11 +303n03lb jesd22 03n03l	PDF
Contextual Info: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd03n03lb ips03n03lb pg-to252-3-11 03n03lb +1pg-to251-3-11	PDF