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    03N03L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD03N03LAG

    Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IPD03N03LAG 1,292
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    Infineon Technologies AG IPB03N03LAG

    Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB03N03LAG 703 1
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    Infineon Technologies AG IPB03N03LBG

    OptlMOS N-Channel Power MOSFET
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    Rochester Electronics IPB03N03LBG 1,000 1
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    • 100 $1.30
    • 1000 $1.08
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    Vyrian IPB03N03LBG 9,060
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    Infineon Technologies AG IPP03N03LBG

    Power Field-Effect Transistor, 80A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP03N03LBG 8,735
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    Infineon Technologies AG IPB03N03LB

    Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB03N03LB 6,064
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    Find more 03N03L price and stock on Findchips.com

    03N03L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPP03N03LB

    Abstract: JESD22
    Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp03n03lbpg-to220-3-103n03lbjesd22 PDF

    03N03LB

    Abstract: MARKING d45
    Contextual Info: OptiMOS 2 Power-Transistor 03N03LB G 03N03LB G 03N03LB G 03N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03lbipu03n03lbips03n03lbipf03n03lb+4pg-to252-3-11q67042-s426003n03lbmarking d45 PDF

    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03laips03n03lapg-to252-3-11q67042-s4249+303n03lapg-to251-3-11q67042-s4253 PDF

    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03laips03n03lapg-to252-3-11q67042-s4249+303n03lapg-to251-3-11q67042-s4253 PDF

    03N03LB

    Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp03n03lbpg-to220-3-103n03lb PDF

    smd 7027

    Abstract: IPB03N03LA 03N03LA JESD22 PG-TO263-3-2 IPB03N03LA G
    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb03n03lapg-to263-3-203n03lasmd 7027+2jesd22ipb03n03la g PDF

    PG-TO252-3-11

    Abstract: 03N03LA IPD03N03LA IPS03N03LA JESD22 P-TO252-3-11 03n03l DSA0026156
    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03laips03n03lap-to252-3-11p-to251-3-11+503n03lapg-to252-3-11jesd2203n03ldsa0026156 PDF

    IPB03N03LB

    Abstract: JESD22 03N03LB
    Contextual Info: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb03n03lbpg-to263-3pg-to220-3-1p-to263-3+203n03lbjesd22 PDF

    IPP03N03LB

    Abstract: JESD22 C3320
    Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp03n03lbpg-to220-3-103n03lbjesd22+1c3320 PDF

    Contextual Info: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipd03n03lbips03n03lbpg-to252-3-11pg-to251-3-11+103n03lb PDF

    S4249

    Abstract: 03N03LA IPD03N03LA IPS03N03LA JESD22 PG-TO252-3-11
    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03laips03n03lapg-to252-3-11pg-to251-3-11+5q67042-s4249q67042-s425303n03las4249jesd22 PDF

    smd 7027

    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb03n03lapg-to263-3-2q67042-s417803n03la+1smd 7027 PDF

    1403V

    Abstract: 03N03LA IPI03N03LA IPP03N03LA JESD22
    Contextual Info: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipi03n03laipp03n03lapg-to262-3-1pg-to220-3-1+403n03lapg-to200-3-11403vjesd22 PDF

    Contextual Info: 03N03LA 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 2.7 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb03n03laipi03n03laipp03n03lap-to263-3-2+4p-to262-3-1p-to220-3-1q67042-s417803n03la PDF

    Q67045-A5078

    Abstract: 03N03LB
    Contextual Info: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb03n03lbp-to263-3pg-to220-3-1q67045-a5078+103n03lb PDF

    Contextual Info: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipi03n03laipp03n03lapg-to262-3-1pg-to220-3-1+2pg-to200-3-103n03la PDF

    smd 7027

    Abstract: Q67042-S4180
    Contextual Info: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipi03n03laipp03n03lapg-to262-3-1pg-to220-3-1+4pg-to200-3-1q67042-s4180q67042-s4179smd 7027 PDF

    smd 7027

    Contextual Info: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipi03n03laipp03n03lapg-to262-3-1pg-to220-3-1+3pg-to200-3-103n03lasmd 7027 PDF

    03N03LB

    Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp03n03lbpg-to220-3-1q67045-a507703n03lb PDF

    03n03la

    Abstract: C3385 Q67042-S4179 IPB03N03LA IPI03N03LA IPP03N03LA smd 7027
    Contextual Info: 03N03LA 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level


    Original     		ipb03n03laipi03n03laipp03n03lap-to263-3-2+7p-to262-3-1p-to220-3-1q67042-s417803n03lac3385q67042-s4179smd 7027 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    03N03LA

    Abstract: IPD03N03LA IPS03N03LA JESD22 P-TO252-3-11
    Contextual Info: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level


    Original     		ipd03n03laips03n03lap-to252-3-11p-to251-3-11+4q67042-s4249q67042-s425303n03lajesd22 PDF

    IPD03N03LB

    Abstract: JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4260
    Contextual Info: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipd03n03lbpg-to252-3-11p-to252-3-11q67042-s4260+203n03lbjesd22 PDF