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    03 SMD TRANSISTOR Search Results

    03 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330BH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF
    BLM21HE472BH1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 4700ohm POWRTRN PDF
    BLM15PX330SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF

    03 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


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    SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP100N03S2-03 Q67042-S4058 PN0303 Q67042-S4057 SPB100N03S2-03 SPI100N03S2-03 PN0303 PDF

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


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    IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 PDF

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Contextual Info: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603 PDF

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Contextual Info: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


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    IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898 PDF

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13 PDF

    pn03l03

    Abstract: Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4055
    Contextual Info: Preliminary data SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 2.7 m ID 100 A P-TO263-3-2


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    SPI100N03S2L-03 SPP100N03S2L-03 SPB100N03S2L-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4056 PN03L03 pn03l03 Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 Q67042-S4055 PDF

    Q67060-S6038

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
    Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID


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    SPP100N04S2L-03 SPB100N04S2L-03 P-TO263-3-2 P-TO220-3-1 SPP100N04S2L-03 Q67060-S6038 PN04L03 SPB100N04S2L-03 Q67060-S6038 Diode 1_b SMD PN04L03 PDF

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


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    SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03 PDF

    2n03l03

    Abstract: SPB80N03S2L-03 SPP80N03S2L-03
    Contextual Info: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 2.8 m ID 80 A P-TO263-3-2 V


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    SPP80N03S2L-03 SPB80N03S2L-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4248 2N03L03 P-TO263-3-2 2n03l03 SPB80N03S2L-03 SPP80N03S2L-03 PDF

    ANPS071E

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03
    Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated


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    SPP100N04S2L-03 SPB100N04S2L-03 SPP100N04S2L-03 Q67060-S6038 SPB100N04S2L-03 Q67060-S6039 PN04L03 BSPP100N04S2L-03 BSPB100N04S2L-03, ANPS071E PDF

    SMD DIODE 615 200A

    Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
    Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m ID 80 A P-TO263-3-2 Type


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    SPP80N03S2-03 SPB80N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4247 2N0303 P-TO263-3-2 SMD DIODE 615 200A 2N0303 SPB80N03S2-03 SPP80N03S2-03 PDF

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 PDF

    2N04L03

    Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
    Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB80N04S2L-03 IPP80N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-20158 2N04L03 2N04L03 IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063 PDF

    2N04L03

    Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
    Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature 40 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 3.1 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


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    SPP80N04S2L-03 SPB80N04S2L-03 Q67040-S4261 Q67040-S4262 2N04L03 BSPP80N04S2L-03 BSPB80N04S2L-03, 2N04L03 ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 PDF

    Contextual Info: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.


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    PZT4403 OT223 SC-73) PZT4401. PZT4403 771-PZT4403-T/R PDF

    ZT4403

    Abstract: data sheet transistor PNP NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODES PZT4401 PZT4403 SC-73 MARKING CODE SMD IC
    Contextual Info: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.


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    PZT4403 OT223 SC-73) PZT4401. PZT4403 ZT4403 data sheet transistor PNP NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODES PZT4401 SC-73 MARKING CODE SMD IC PDF

    PBLS4004D

    Abstract: tsop6 marking 312
    Contextual Info: PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PBLS4004D OT457 SC-74) PBLS4004D tsop6 marking 312 PDF

    BC847BS

    Abstract: NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F
    Contextual Info: BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 03 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.


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    BC847BS OT363 SC-88) BC857BS. BC847BS NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F PDF

    PBLS4005D

    Contextual Info: PBLS4005D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PBLS4005D OT457 SC-74) PBLS4005D PDF

    PBLS4002D

    Contextual Info: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PBLS4002D OT457 SC-74) PBLS4002D PDF

    PBLS4001D

    Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PBLS4001D OT457 SC-74) PBLS4001D PDF

    PBSS301ND

    Abstract: PBSS301PD
    Contextual Info: PBSS301ND 20 V, 4 A NPN low VCEsat BISS transistor Rev. 03 — 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


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    PBSS301ND OT457 SC-74) PBSS301PD. PBSS301ND PBSS301PD PDF

    PBSS301ND

    Abstract: PBSS301PD
    Contextual Info: PBSS301PD 20 V, 4 A PNP low VCEsat BISS transistor Rev. 03 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


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    PBSS301PD OT457 SC-74) PBSS301ND. PBSS301PD PBSS301ND PDF

    PBLS4003D

    Abstract: tsop6 marking 312
    Contextual Info: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PBLS4003D OT457 SC-74) PBLS4003D tsop6 marking 312 PDF