02S752B Search Results

aeg diode Si 11 K

Abstract: aeg diode Si 11 aeg Diode D6 aeg diode Si 11 n
Contextual Info: ADV MICRO P LA / P L E / A R R AY S It D E | 02S75EL. OOSTMST Û T-46-13-47 Zero Power CMOS Hard Array Logic ZHAL 24A Series Features/Benefits Ordering information • Zero standby power PART NUM BER • Low power operation PACKAGE • High-speed C M O S technology

Contextual Info: P R E L IM IN A R Y COM’L: -15/20 M A C H 4 6 5 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circult programmable

14L4

Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
Contextual Info: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information

mach 3 family amd

Abstract: circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N
Contextual Info: FINAL COM’L: -7.5/10/12/15/20 IND: -10/12/14/18/24 M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Z I Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ Programmable power-down mode ■ 32 Outputs

PAL16l8 MMI

Abstract: PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a
Contextual Info: ADV HICRO PLA/PLE/ARRAYS C O M ’L 2flE 0aS7S2b D OGa^Mb- M IL P A L 1 6 R 8 il \ T -4 6 —1 9 -1 3 Am>a 5 Advanced Micro Devices F a m i l y 20-pin TTL P rogram m able Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay

mach231sp

Contextual Info: COM’L: -10/12/15/20 IND: -12/14/18/24 M A C H 2 3 1 S P - 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS In-System Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • JTAG-Compatible, 5-V in-system programming ■ 100 Pins ■ Peripheral Component Interconnect PCI

Contextual Info: Advanced Micro Devices MACH220-10 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ ■ 8 PAL blocks with buried macrocells 10 ns tPD ■ ■ 80 MHz fMAx external

Contextual Info: COM'L: -10 Advanced Micro Devices P A L L V 1 6 V 8 -1 0 Low-Voltage 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = +3.0 V to +3.6 V Electrically-erasable CMOS technology pro­

16L8-5

Abstract: PAL16R8
Contextual Info: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay

pal 007a

Abstract: MACH21D PAL 006A PAL 002a pal 005a MACH110 MACH210 MACH215 PAL22V10 PAL22V16
Contextual Info: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 IND: -12/14/18/24 M ACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 a Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Peripheral Component Interconnect PCI compliant

Am29F040

Contextual Info: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: FINAL a IN D :-12/15 Advanced Micro Devices P A L C E 1 6 V 8 Z -1 2 /1 5 Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 30 pA Standby Current — 12 ns propagation delay for “-1 2” version

Contextual Info: FINAL COM’L: -15/20, Q-25 a MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ 15nstpo

Contextual Info: FINAL COM’L: -12/15/20 IND: -18/24 a Advanced Micro Devices M A C H 1 2 0 -1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 56 Inputs ■ 48 Macrocells ■ 48 Outputs ■ 12 ns tPDCommercial 18 ns tpD Industrial

Contextual Info: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current

Contextual Info: ADV MICRO P L A / P L E / A R R A Y S P is a 2ÔE » □2S7S2b 0G2lb3M T IA M D 5 COM ’L PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS 28-pln versatile PAL programmable logic device architecture

Contextual Info: ADV MICRO MEMORY T> m b4E 02S752Ö D Q 3 2 2 1 4 31T • AMD4 a Advanced Micro Devices Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity

PAL20LB

Abstract: mmi 20L8 amd part marking 20L8 PAL20L8 PAL20R4 PAL20R6 PAL20R8 PAL20L8-7
Contextual Info: F IN A L C O M 'L : -5 /7 /B /B -2 /A , 10/2 a Advanced Micro Devices PAL20R8 Family 24-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5*ns propagation delay ■ Power-up reset for Initialization ■ Popular 24-pin architectures: 20L8,20R8,

amd215

Contextual Info: FIN A L COM’L: -15/20, Q-25 a Advanced Micro Devices MACH445-15/20, Q-25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable

AMD a 462 socket pinout

Contextual Info: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption

Contextual Info: 51E DE5752b D 003225b 577 • A U D E ADV MICRO P L A / P L E / A R R A Y S COM’L: -4/5/7/D/B/B-2/A MIL: - 1 0 /1 2/B/B-2/A/B-4 a Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS ■ As fast as 4.5 ns maximum propagation delay

Contextual Info: P R E L IM IN A R Y CO M ’L: -7/10/12/15/20 MACH221 -7/10/12/15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 96 M acrocells ■ 7.5 ns tpD ■ ■ 133 M Hz fcNT ■ 56 Bus-Friendly Inputs ■

Contextual Info: FINAL COM’L: -12/15/20 IND: -18/24 il M ACHLV210-12/15/20 Advanced Micro Devices High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible - ■ 83.3 MHz fcNT ■ 38 Bus-Friendly Inputs Vcc = +3.0 V to +3.6 V

Contextual Info: COM’L: -7.5/10/12/15/20 M A C H 2 3 1 -7 /1 0 /1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins ■ Program m able power-down mode ■ 128 Macrocells ■ 64 Outputs ■ 7.5 ns tpo ■ 128 Flip-flops; 4 clock choices