02S752Ö Search Results

Zl11

Abstract: A12C
Contextual Info: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

AM27C4096

Abstract: 40-pin EPROM pinout
Contextual Info: ADV MICRO MEMORY b4E ]> • D S S 7 S 5 Ô Ü 0 3 2 D 3 2 573 ■ AMDM Am27C4096 Advanced Micro Devices 4 Megabit (262,144 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time — 100 ns ■ Low power consumption — 100 nA maximum CM OS standby current

29F080

Contextual Info: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements

Contextual Info: ADV MICRO M E M OR Y 1ME D | 0257553 0 0 2 7 5=1 0 1 | A m 9 1 2 8 2048x8 Static RAM Devices DISTIN C TIVE CHARA CTERISTICS • • • Logic voltage levels compatible with TTL Three-state output buffers and common I /O Ice Max., as low as 100 mA • • ¡AA^ACS as low as 70 ns

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

AM99C328-70

Contextual Info: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum

Contextual Info: ADV MICRO IME MEMORY 57C401/13 57C402/23 D I □2S7S5Û ooa?ast. g 57C4033 I a dvanced Micro Devices Military CMOS Zero Power FIFOs 64x4 64x5 Memory 12 MHz Cascadable Conforms to MIL-STD-883, Class B (Latest Revision) DISTINCTIVE CHARACTERISTICS • Zero standby power

Am29F040

Contextual Info: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: Advanced Micro Devices Am27C2048 2 Megabit 131,072 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ Fast access tim e ■ — 70 ns ■ Low power consum ption 100% Flashrite programming — Typical programming time of 16 seconds — 100 jiA maximum CMOS standby current

Contextual Info: ADV MICRO MEMORY IAMD4 02S752Ö 0 0 3 0 5 7 4 4ÔE » ' 1-46-13-25 Am27X256 Advanced Micro Devices 32,768 X S-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

Contextual Info: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area

data programmers DIP PLCC

Abstract: AMD 478 socket pinout
Contextual Info: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V

Contextual Info: ADV MICRO L.4E D MEMORY • 02S7Saa 0Q321D1 ÛÛO ■ PRELIMINARY a Advanced Micro Devices A m 2 7 L V 0 1 0 /A m 2 7 L V 0 1 O B 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V

programming 29F400

Abstract: COVIC
Contextual Info: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements

Contextual Info: ADV MI CRO G5S7S5Ö taME D MEMORY DDansa DEO • AMDM ZT Advanced Micro Devices Am27C010 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 90 ns ■ High noise immunity

Contextual Info: ADV MICRO MEMORY T> m b4E 02S752Ö D Q 3 2 2 1 4 31T • AMD4 a Advanced Micro Devices Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity

AMD a 462 socket pinout

Contextual Info: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption

AMD am2 socket pinout

Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
Contextual Info: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds

AM27C64

Abstract: DG3032 AM27C64-90DC
Contextual Info: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■

PEB 2261

Abstract: 0034D A03407
Contextual Info: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current

Contextual Info: ADV MICRO MEMORY b4 E D • G2S7SSÖ 0G325QS 3 0 7 ■AM1>4 z \ Advanced Micro Devices Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: Advanced Micro Devices Am27X1024 1 Megabit 65,536 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optimized programm ing ■ High noise immunity — Fully tested and guaranteed