02MAY11 Search Results

Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Part Marking Information

Contextual Info: Part Marking Information Vishay Semiconductors D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

APCMC-14-0005 REV A

Contextual Info: 1 2 3 1.40±0.05 Ø 0.85±0.10 TYP. B±0.30 A±0.10 *Ø1.5±0.10 . 1.80 1.80 1.50 2.54 2.54 1.27±0.05 4 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 5.00 4.00 3.1 1.27±0.15

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin

Contextual Info: PHP Vishay Dale Thin Film High Power Thin Film Wraparound Chip Resistor FEATURES • • • • • • High purity ceramic substrate Power rating to 2.5 W Resistance range 10  to 30 k Resistor tolerance to ± 0.1 % TCR to ± 25 ppm/°C Flame resistant UL 94 V-0

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin

Contextual Info: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . PHP KEY BENEFITS • High purity ceramic substrate • Power rating to 2.5 W • Resistance range: 10 W to 30 kW • Resistor tolerance to ± 0.1 % • TCR to ± 25 ppm/°C • Flame resistant UL 94 V-0 • Lead Pb -free and lead terminations available

SC-89

Abstract: Si1024X
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin

Contextual Info: 1 2 3 4 1.40±0.05 Ø 0.85±0.10 TYP. *Ø1.5±0.10 2.54 A±0.10 1.27±0.05 . 1.80 1.50 2.54 1.80 B±0.30 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 1.90 4.00 4.00 3.1 0.25

Contextual Info: SPICE Device Model SQ4920EY Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si2338DS

Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI7112DN-T1-E3

Contextual Info: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si2324

Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

100 20L A1 diode

Abstract: diode L 0747
Contextual Info: SQD30N05-20L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC

100 20L A1 diode

Abstract: diode L 0747 S11074
Contextual Info: SQD30N05-20L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

E28476

Abstract: 453973
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION By - REVISIONS LOC DIST AF 58 ALL RIGHTS RESERVED. LTR DESCRIPTION V2 1. FOR USE 2. WIRE 3. SEE D E T A IL PRINTED RANGE: MAX D IN 18-28 O U TS ID E DIA FURNISHED AS A CIRCUIT AWG

Contextual Info: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • Halogen-free According to IEC 61249-2-21