02FEB09 Search Results

Contextual Info: 3 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PU B LIC ATIO N 2 - ,- R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. P LTR D E S C R IP TIO N A1 REVISED PER DATE E C R - 0 9 - 0 0 1 88 3 DWN 02FEB09

EIA-364-37

Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 HDP-20 PED Engineering
Contextual Info: Product Specification 108-40005 02Feb09 Rev E AMPLIMITE* HDP-20 Subminiature D Connector With F Crimp Contacts 1. SCOPE 1.1. Content This specification covers the perform ance, test and quality requirem ents for the AMPLIMITE* HDP-20 subm iniature D connectors with rem ovable F crim p contacts. The assem bly consists of a two piece

SiR460D

Abstract: SiR460DP siR460
Contextual Info: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET

SI2333DS-T1-E3

Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

DTC114ECA

Contextual Info: DTC114ECA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 SOT-23 Features: (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25℃)

DTC114EUA

Contextual Info: DTC114EUA NPN DIGITAL TRANSISTOR 3 P b Lead Pb -Free 1 2 Features: SOT-323(SC-70) (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy.

Si4630DY

Abstract: Si4630DY-T1-E3 Si4630DY-T1-GE3
Contextual Info: Si4630DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4660DY

Abstract: Si4660DY-T1-E3 Si4660DY-T1-GE3
Contextual Info: Si4660DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 23.1 0.007at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si2309DS

Abstract: Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4634DY

Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

IRL540

Abstract: SiHL540 SiHL540-E3 IRL540PBF
Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

IRFP350LC

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247

IRFR120 siliconix

Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFPS38N60L

Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive

IRFIBF30GPBF

Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFI9634G

Abstract: SiHFI9634G SiHFI9634G-E3
Contextual Info: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the

IRFPE30

Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole

IRL640

Abstract: IRL640 equivalent SiHL640 SiHL640-E3
Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRL530

Abstract: SiHL530 SiHL530-E3
Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: 293D Vishay Sprague Solid Tantalum Surface Mount Capacitors TANTAMOUNT Molded Case, Standard Industrial Grade FEATURES • Terminations: 100 % matte tin, standard, tin/lead available • Compliant terminations • Molded case available in six case codes

si4626a

Abstract: si4626
Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

mosfet 23 Tsop-6

Contextual Info: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated