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    Vishay Intertechnologies SIHL640STRL-GE3

    Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R
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    Verical SIHL640STRL-GE3 800 800
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    • 1000 $0.87
    • 10000 $0.80
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    Avnet Americas SIHL640STRL-GE3 Tape & Reel 36 Weeks 800
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    • 1000 $0.90
    • 10000 $0.84
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    Mouser Electronics SIHL640STRL-GE3
    • 1 $2.91
    • 10 $1.87
    • 100 $1.28
    • 1000 $0.92
    • 10000 $0.87
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    Bristol Electronics SIHL640STRL-GE3 553
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    Quest Components SIHL640STRL-GE3 442
    • 1 $3.52
    • 10 $3.52
    • 100 $3.52
    • 1000 $1.45
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    TME SIHL640STRL-GE3 1
    • 1 $1.76
    • 10 $1.58
    • 100 $1.26
    • 1000 $1.13
    • 10000 $1.13
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    Vishay Intertechnologies SIHL640S-GE3

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: SIHL640S-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHL640S-GE3 Tape & Reel 36 Weeks 1,000
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    • 10000 $0.89
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    Mouser Electronics SIHL640S-GE3
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    • 1000 $0.92
    • 10000 $0.87
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    Vishay Intertechnologies SIHL640STRR-GE3

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: SIHL640STRR-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHL640STRR-GE3 Tape & Reel 36 Weeks 800
    • 1 -
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    • 1000 $0.90
    • 10000 $0.84
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    Mouser Electronics SIHL640STRR-GE3
    • 1 $2.91
    • 10 $1.87
    • 100 $1.28
    • 1000 $0.92
    • 10000 $0.87
    		Get Quote

    Vishay Siliconix SIHL640STRL-GE3

    SIHL640STRL-GE3 N-CHANNEL MOSFET TRANSISTOR, 17 A, 200 V, 3-PIN SMD-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHL640STRL-GE3 Bulk 100
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    • 100 $5.46
    • 1000 $4.01
    • 10000 $4.01
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    SIHL640 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRL640

    Abstract: SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl640o-220ab2002/95/ec+211-mar-11sihl640-e3 PDF

    Contextual Info: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irl640sihl640an609configuratip-10+44514m1503m9659m8331m PDF

    IRL640S

    Abstract: SMD-220 S10 SMD MARKING
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		irl640ssihl640ssmd-2202002/95/ec+211-mar-11s10 smd marking PDF

    SiHL640S

    Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irl640ssihl640ssmd-22018-jul-08+7s8143smd e3as-81431-revvishay smd mosfetsmd diode marking absmd diode ncsmd diode marking 12c PDF

    IRL640

    Abstract: IRL640 equivalent SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl640o-22018-jul-08+2irl640 equivalentsihl640-e3 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl640o-220ab2002/95/ec+22011/65/eujs709a PDF

    IRL640

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		irl640sihl640o-22012-mar-07 PDF

    AN609

    Abstract: IRL640S
    Contextual Info: IRL640S_RC, SiHL640S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irl640ssihl640san6098292m+60633m4369m5016m2686m2196m8257m PDF

    irfl640

    Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		irl640sihl640o-22018-jul-08+3irfl640part marking absihl640-e3 PDF

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		irl640ssihl640s2002/95/ecsmd-220+22011/65/eu12-mar-12 PDF

    S10 SMD MARKING

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		irl640ssihl640s2002/95/ecsmd-220+218-jul-08s10 smd marking PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl6402002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl640o-220ab2002/95/ec+22011/65/eu12-mar-12 PDF

    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		irl640ssihl640ssmd-2202002/95/ec+32011/65/eujs709a02-oct-12 PDF

    smd diode B3

    Abstract: 1461 smd
    Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		irl640ssihl640s2002/95/ecsmd-220+311-mar-11smd diode b31461 smd PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl640o-220ab2002/95/ec+22011/65/eujs709a PDF

    IRL640

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl6402002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		irl640sihl6402002/95/eco-220ab+111-mar-11 PDF